Publications｜SOI Pixel Detector R&D

Last update Mar. 28, 2024

Publications

Books etc. , Graduation/Master/Doctor Thesis, Publication List

Books etc.

SOI量子線イメージセンサ」、新井康夫、距離・画像センサの基礎と最先端、S&T出版（株）、2020年12月10日、ISBN978-4-907002-83-1 C3058。
“Analog Electronics for Radiation Detection (Devices,Circuits, and Systems)”, Editor Renato Turchetta, Chapter 5 'Time-to-Dogital Converter', Y. Arai, ISBN-10: 1498703569, ISBN-13: 978-1498703567, CRC Press; (2016/4/26)
“Radiation Imaging Detectors Using SOI Technology”, Y. Arai and I. Kurachi, Synthesis Lectures on Emerging Engineering Technologies, Morgan & Claypool Publisher (2017/2/15), ISBN-13: 978-1627056960.
日本物理学会誌、実験技術「SOI技術を用いた放射線イメージセンサーの開発」, 2010, Vol. 65, No. 9, pp. 691-698。
日本語解説（2007.6　高エネルギーニュース）
"First Results of 0.15 um CMOS SOI Pixel Detector", Talk given at SLAC seminar and SNIC06 symposium (Apr. 4/5, 2006, Y.Arai) , SLAC Online Paper (Aug. 2006)

Graduation/Master/Doctor Thesis

「サブマイクロ秒電子線イメージングを可能にするメモリ搭載型SOIピクセル検出器のデータ収集システムの開発と性能評価」杉江晃成、名古屋大学大学院、2024年2月、修士論文
「ＳＯＩピクセル検出器を用いた単電子検出による電子波干渉実験」石田裕一、名古屋大学、2024年3月、卒業論文
「プリシャワー検出器の検討とシリコンピクセル検出器の性能評価」、奈良女子大学、田頭陽菜、2024年3月、修士論文。
「GeV 電子ビームに最適化した SOI ピクセル検出器 INTPIX4NA を用いたテレスコープシステムの開発」、大森匠、筑波大学、2024年3月、修士論文。
「新 PDD 構造を導入した X 線天文用 SOI ピクセル検出器のサブピクセルレベルの X 線応答特性の評価」、土居俊輝、東京理科大、2023年2月、修士論文。
「MeV ガンマ線 Compton camera への利用に向けた pixel 検出器 SOIPIX の基礎特性試験」、橋爪大樹、広島大学、2022年3月、卒業論文。
「X 線偏光観測を目指した SOI ピクセル検出器の放射線耐性の評価」、角町駿、東京理科大、2023年2月、修士論文。
「PDD 構造を有する SOI-CMOS 検出器 XRPIX8 におけるイベント駆動読み出しの評価」、岩切卯月、宮崎大学、2022年2月、卒業論文。
「TCAD シミュレーションを用いた X 線 SOI ピクセル検出器の放射線損傷メカニズムの解明」、北島正隼、東京理科大、2022年2月、修士論文。
「X線 SOI-CMOS 検出器の大型化に伴う応答劣化の要因分析」、三枝紀嵐、宮崎大学、2022年1月、修士論文。
「次世代 X 線天文用 SOI ピクセル検出器の軟 X 線性能及びノイズ性能の定量的研究」、児玉涼太、京都大学、2021年3月、修士論文。
「固定電位層を導入したX 線天文衛星用X 線SOI ピクセル検出器の放射線耐性評価」、林田光揮、東京理科大、2021年3月、修士論文。
急峻なSSを持つPN-Body Tied SOI-FETの過渡解析、遠藤　大、金沢工業大学大学院工学研究科電気電子工学専攻、2020年3月修士論文
PN-Body Tied SOI-FETの解析 -Scalingの検討-、中野　駿、金沢工業大学大学院工学研究科電気電子工学専攻、2020年3月修士論文
極急峻なSSを持つPN-Body Tied SOI-FETの解析 -基板バイアスとＢＯＸ中の正電荷の影響-、矢吹　亘、金沢工業大学大学院工学研究科電気電子工学専攻、2020年3月修士論文
環境RF発電向け極低電圧PNBT-diodeの研究、山田　拓、金沢工業大学大学院工学研究科電気電子工学専攻、2020年3月、修士論文。
「SOIピクセル検出器をもちいたシングルショット電子線イメージングの研究」、篠崎暉、名古屋大学大学院、2020年3月、修士論文。
「次世代 X 線天文衛星搭載用半導体検出器の放射線耐性の評価」、北島正隼、東京理科大、2020年3月、卒業論文。
Development of the SOI-SiPM for Photon-Counting CT and Time-of-Flight PET, Cheonghun Kim, Univ. of Tokyo, 2020 年3月、修士論文。
「PDD構造をもったSOI検出器の放射線損傷」、安部竜平、筑波大学数理物質科学研究科、2020年２月、修士論文。
「大面積電荷積分型SOIピクセル検出器INTPIX7を用いたビーム飛跡検出のための開発研究」、岩波四季恵、筑波大学数理物質科学研究科、2020年２月、修士論文。
「ILC崩壊点検出器としての位置・時間計測が可能なSOIピクセル検出器SOFISTの性能評価」、村山仁志、筑波大学数理物質科学研究科、2020年２月、修士論文。
「SOI-MOSFET検出器におけるBOX電荷自動補正回路の放射線耐性の評価」、渡辺圭敏、筑波大学数理物質科学研究科、2020年２月、修士論文。
「メッシュ実験による次世代X線天文用SOIピクセル検出器のサブピクセル性能の研究」、佳山一帆、京都大学大学院、2020年3月、修士論文。
「SOI 半導体検出器を用いた宇宙ガンマ線用電子飛跡検出型コンプトンカメラの読み出しシステムの開発と飛跡検出性能の評価」、加藤凌、茨城大学大学院、2020年3月、修士論文。
Development of monolithic pixel detectors, Szymon Bugiel (AGH-UST, Cracow), Aug. 12, 2019
Beam test studies of monolithic pixel structures for CLIC vertex detector, Roma Bugiel (AGH-UST, Cracow), May, 2019
「SOI技術を用いた軟X線用CMOS-APD撮像検出器の研究開発」、浜崎竜太郎、総合研究大学院大学、2019年3月、博士論文。
「フォトンカウンティングCT への応用を目指したサブミリSiPM アレイの開発」、小山晃広、東京大学、2019年2月、博士論文。
PN-Body Tied SOI-FETを使ったRF向けMOS接続ダイオードの研究、百瀬　駿、金沢工業大学大学院工学研究科電気電子工学専攻、2019年3月修士論文
「急峻なサブスレッショルド特性を持つ“PN-body tied SOI-FET”の研究」、森　貴之、金沢工業大学、2019年3月博士論文
「ILC バーテックス検出器に向けた SOI ピクセルセンサーの開発研究 (Development of SOI pixel sensors for the ILC vertex detector)」東北大学大学院理学研究科物理学専攻李韜瀚、2019年3月、修士論文。
「大面積SOI ピクセル検出器INTPIX4 で構築した飛跡再構成システムの120GeV ビームを用いた性能評価」、山内大輝、筑波大学物理学専攻、2019 年2 月、修士論文。
「次世代宇宙X線観測用 SOIピクセル検出器のサブピクセルスケールのX線応答の研究」、大野賢司、東京理科大学大学院理工学研究科物理学専攻、2019 年2 月、修士論文。
「TCADシミュレーションを用いたX線SOIピクセル検出器の電荷損失の原因の究明」、根岸康介、東京理科大学大学院理工学研究科物理学専攻、2019 年2 月、修士論文。
「次世代X線撮像分光器XRPIXの放射線耐性評価」、鑓田敬吾、東京理科大学大学院理工学研究科物理学専攻、2019 年2 月、修士論文。
「XRPIX6Cの各読み出し方法でのエネルギー分解能の比較とRaspberry PIの実験への活用法」、古知武、東京理科大学理工学部物理学科、2019 年2 月、卒業論文。
「次世代Ｘ線撮像分光器XRPIX６Ｃ基本性能の温度依存性の評価」、鴇田翔哉、東京理科大学理工学部物理学科、2019 年2 月、卒業論文。
「PDD構造を導入した次世代X戦天文用SOIピクセル検出器の基礎研究」
、林田光揮、東京理科大学理工学部物理学科、2019 年2 月、卒業論文。
「スペクトラル位相CTのための埋め込みX線源を用いた振幅格子法の検討」、石井裕太、大阪大学工学部応用自然科学科、2019年2月、卒業論文。
「固定電位層を導入した次世代X線天文用SOIピクセル検出器の研究」、京都大学大学院理学研究科物理学第二教室宇宙線研究室、原田颯大、2019 年1 月、修士論文。
「Chandra衛星による超新星残骸の非熱的X線放射の観測的研究およびX線天文用SOIピクセル検出器のトリガー機能と多層化システムの検証」、京都大学大学院理学研究科物理学第二教室宇宙線研究室、奥野智行、2019 年1 月、修士論文。
「Ｘ線SOI-CMOS 素子のイベント駆動読出しの評価および改良」、福田　昂平、宮崎大学工学研究科工学専攻エネルギー系コース、2019 年1 月、修士論文。
「次世代宇宙 X 線観測用 SOI ピクセル検出器のサブピクセルスケールの X 線応答の研究」、大野顕司、東京理科大、2019年3月、修士論文。
CP法を用いたSOI裏面界面準位の評価と支持基板による差の検討、武田　和、金沢工業大学大学院工学研究科電気電子工学専攻、2018年3月修士論文
極低ドレイン電圧で急峻なSSを発生するPN-Body Tied SOIMOSFETのパルス測定における解析、堀井　隆、金沢工業大学大学院工学研究科電気電子工学専攻、2018年3月修士論文
極低電圧で急峻なサブスレッショルド特性を持つPN-Body Tied SOIMOSFETの動作メカニズムの解析、吉田　貴、金沢工業大学大学院工学研究科電気電子工学専攻、2018年3月修士論文
「SOI 半導体を用いたガンマ線天文用電子飛跡検出型コンプトンカメラの開発」、東城直美、茨城大学大学院理工学研究科理学専攻、2019年3月、修士論文。
「X線 SOI-CMOS 素子のイベント駆動読出しの評価および改良」、福田昂平、宮崎大、2019年1月、修士論文。
「A STUDY ON LOW-NOISE HIGH-DYNAMIC-RANGE SOI PIXEL X-RAY IMAGE SENSOR FOR NEXT GENERATION ASTRONOMICAL SATELLITE MISSION」、 Sumeet Shrestha、静岡大学、2018年6月、修士論文。
「SOI ピクセル検出器を用いたX 線計測システムの構築と評価」、西村龍太郎、総合研究大学院大学
高エネルギー加速器科学研究科素粒子原子核専攻、2018年3月、博士論文
「ピクセル検出器と振幅格子によるマイクロフォーカスX線イメージングの高度化」、細野　凌、大阪大学工学研究科生命先端工学専攻、2018年2月、修士論文。投稿論文。
「Study of the sensitivity of a solar axion search experiment using SOI pixel detector」、Tatsuki Ose Department of Physics, The University of Tokyo, January 12, 2018、修士論文。
「サブ秒角撮像を目指すX 線多重像干渉計MIXIM の基礎開発」、川端　智樹、大阪大学大学院理学研究科宇宙地球科学専攻、2018年3月修論
「次世代X線検出器XRPIXの基礎開発：XRPIX2bFZの動作温度依存性に関する研究」、笹木彬礼、東京理科大学、2018 年2 月、卒業論文。
「埋込ダイオード構造を有する X線天文用SOIピクセル検出器に関する研究」、亀濱博紀、静岡大学、2018年2月、博士論文。
「次世代広帯域 X 線撮像分光衛星に向けた X 線 SOI ピクセル検出器多層化システムの開発」、立花克裕、京都大学、2018年2月、修士論文。
「ILC バーテックス検出器に向けた位置・時間計測SOI ピクセル検出器の研究開発」、小野峻、総合研究大学院大学高エネルギー加速器科学研究科素粒子原子核専攻、2017年6月、博士論文
「Background Studies for Axion & WIMP Detection Experiments Using the XRPIX Silicon Detector」、Johnny Alejandro Mora Grimaldo Department of Physics The University of Tokyo、August 2017、修士論文。
「サブミクロンスケールの位置分解能を持つ高精細SOIピクセル検出器の開発研究」、関川大介、筑波大学大学院、物理学専攻、2017年2月、修士論文。
「MGy放射線耐性を持つ2 層埋込酸化膜構造SOI ピクセル検出器の開発研究」、青柳　航筑波大学大学院、物理学専攻、2017年2月、修士論文。
" Basic research on SOI pixel detectors with internal gain based on avalanche multiplication", Bipin Subedi, Master’s Program in Physics, Graduate School of Pure and Applied Sciences, Univ/ of Tsukuba, 2017年2月、修士論文。
「X 線天文用 SOI ピクセル検出器の大面積化とイベント駆動読み出しの評価」林秀輝、京都大学、修士発表、2017年2月。
「ILCに向けたピクセルセンサー:SOFISTの動作試験」、大阪大学理学研究科物理学専攻、森哲平、2017年2月、修士論文。
「軟X線に対するXRPIXのサブピクセルレベルの応答特性の研究」、玉澤晃希、東京理科大学、2017 年2 月、修士論文。
「次世代 X 線天文衛星搭載に向けた裏面照射型 SOI ピクセル検出器の軟 X 線感度の改善」、伊藤真音、京都大学、2017年1月、修士論文。
「チャージポンピング法によるSOIデバイスの埋め込み酸化膜裏面界面の評価」、金沢工業大学大学院工学研究科電気電子工学専攻博士前期課程　瀧　久幸、修士論文。
「SOI構造を用いたSuper Steep Cut Off Deviceの研究」、金沢工業大学大学院工学研究科電気電子工学専攻博士前期課程　蔵本　陽介、修士論文。
"ピクセル型X線検出器XRPIXを用いたX線タルボ干渉計の開発"、久留飛寛之、大阪大学理学研究科宇宙地球科学専攻修士、2016年2月、修士論文。
宮崎大学大学院応用物理学専攻竹中亮太修士論文、「Ｘ線 SOI-CMOS 素子のＸ線TID効果の測定」
浅野麻莉（筑波大学大学院、数理物質科学研究科）M Thesis, 「高エネルギー実験のための2層埋込酸化膜構造を持つSOIピクセル検出器の開発研究」(2016.3)
飛田尚志（筑波大学大学院、数理物質科学研究科）M Thesis, 「二層埋込酸化膜構造を持つSOIピクセル検出器回路の放射線損傷の補償」(2016.3)
山口信二郎(Tohoku Univ.) M Thesis 「国際リニアコライダーのビーム形状測定のためのペアモニターの研究」(2016.3)
Senzaki (Tsukuba Univ.) M Thesis 「ニュートリノ崩壊光探索のための超伝導トンネル接合光検出器及び極低温増幅器の開発研究」(2016.2)
「次世代X線観測器（XRPIX3b-CZ,FZ）の性能評価」、小澤祐亮、東京理科大学、2016 年2 月、卒業論文。
H. Matsumura(Kyoto Univ.) M Thesis 「宇宙X線観測用SOI ピクセル検出器における
電荷収集効率の改善」(2015.1)1702mori_Mthesis
「次世代X線観測器（XRPIX）の基礎開発」、玉澤晃希、東京理科大学、2016 年2 月、卒業論文。
N. Shinoda(Tohoku Univ.) M Thesis 「高エネルギー物理学実験のためのSOI 技術を用いた
PIXOR半導体検出器の基礎的研究」(2014.2)
T. Ishibashi(Tsukuba Univ.) M Thesis「二重SOI層構造を持つ大面積電荷積分型 SOIピクセル検出器の性能評価」(2013.2)
H. Katsurayama(Tsukuba Univ.) M Thesis 「積分型SOI pixel 検出器による高エネルギー粒子ビーム飛跡再構成実験」(2012.3)
K. Shinsho(Tsukuba Univ.) M_Thesis「高エネルギー荷電粒子検出用SOI ピクセル検出器の開発研究」(2012.2)
Y. Ono(Tohoku Univ.) M_Thesis 'Research and development of the PIXOR (PIXel OR) semiconductor detector for the high energy experiments based on the SOI technology', !東北大学物理学専攻賞！(2012.2)
Nakashima (Kyoto Univ.) M Thesis, ！2010年度測定器開発審査員特別賞！(2011.3)
Uchida (Osaka Univ.) M Thesis(2011.3)
Kochiyama (Tsukuba Univ.) M Thesis(2010.3)
Sega (Tsukuba Univ.) M Thesis(2010.3)
Ryu (Kyoto Univ.) M Thesis(2010.3)
Hirose (Osak Univ.)、修士論文「SOI技術を用いた一体型Pixel検出器用読み出しシステムの開発、及び積分型Pixel検出器の性能評価」(2009.3.25)
Sato (Tohoku Univ.) M Thesis(2009.3)
Y. Saegusa (Tokyo Institute of Technology) 'Development of Semiconductor Detector with SOI Technology'(2008.3)
Mochizuki (Tsukuba Univ.) M Thesis(2008.3)

Publication List

“Design improvement and characterization of SOI-based silicon-photomultiplier prototype”, Kenji Shimazoe, Cheonghun Kim, Hiroyuki Takahashi, Yasuo Arai, Nuclear Inst. and Methods in Physics Research, A 1047 (2023) 167902, https://doi.org/10.1016/j.nima.2022.167902.

"X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite", Masatoshi Kitajima, Kouichi Hagino, Takayoshi Kohmura, Mitsuki Hayashida, Kenji Oono, Kousuke Negishi, Keigo Yarita, Toshiki Doi, Shun Tsunomachi, Takeshi G. Tsuru, Hiroyuki Uchida, Kazuho Kayama, Ryota Kodama, Takaaki Tanaka, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Masataka Yukumoto, Kira Mieda, Syuto Yonemura, Tatsunori Ishida, Yasuo Arai, Ikuo Kurachi. J. Astron. Telesc. Instrum. Syst. 8 (2), 026007 (17 June 2022) https://doi.org/10.1117/1.JATIS.8.2.026007.
“Anomaly detection in rails using dimensionality reduction”, ISIJINT-2022-279.R1, Vol. 63, No. 1
"Single event tolerance of X-ray silicon-on-insulator pixel sensors," Kouichi Hagino, Mitsuki Hayashida, Takayoshi Kohmura, Toshiki Doi, Shun Tsunomachi, Masatoshi Kitajima, Takeshi G. Tsuru, Hiroyuki Uchida, Kazuho Kayama, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Masataka Yukumoto, Kira Mieda, Syuto Yonemura, Tatsunori Ishida, Takaaki Tanaka, Yasuo Arai, Ikuo Kurachi, Hisashi Kitamura, Shoji Kawahito, Keita Yasutomi, J. Astron. Telesc. Instrum. Syst. 8(4), 046001 (2022), doi: 10.1117/1.JATIS.8.4.046001.

"INTPIX4NA -- new integration-type silicon-on-insulator pixel detector for imaging application", R. Nishimura, S. Kishimoto, T. Sasaki, S. Mitsui, M. Shinya, Y. Arai, T. Miyoshi, 2021 JINST 16 P08054, DOI: 10.1088/1748-0221/16/08/P08054.
"Proton radiation hardness of x-ray SOI pixel sensors with pinned depleted diode structure”, Mitsuki Hayashida,a Kouichi Hagino ,a,* Takayoshi Kohmura, Masatoshi Kitajima,a Keigo Yarita,a Kenji Oono,a Kousuke Negishi, Takeshi G. Tsuru ,b Takaaki Tanaka ,c Hiroyuki Uchida , Kazuho Kayama, Ryota Kodama,b Koji Mori,d Ayaki Takeda, Yusuke Nishioka,d Takahiro Hida,d Masataka Yukumoto, Yasuo Arai , Ikuo Kurachi,f Hisashi Kitamura ,g Shoji Kawahito,h and Keita Yasutomi, http://dx.doi.org/10.1117/1.JATIS.7.3.036001
"Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope", Takafumi Ishida, Akira Shinozaki, Makoto Kuwahara, Toshinobu Miyoshi, Koh Saitoh and Yasuo Arai. Microscopy, 2021, 321–325, doi:10.1093/jmicro/dfaa072, Advance Access Publication Date: 12 November 2020.
"High spatial resolution monolithic pixel detector in SOI technology", R. Bugiel a,∗, S. Bugiel a,1, D. Dannheim b, A. Fiergolski b, D. Hynds b,2, M. Idzik a, P. Kapusta c, W. Kucewicz a, M. Munker b, A. Nurnberg b,3, S. Spannagel b,4, K. Świentek a, Nuclear Inst. and Methods in Physics Research, A 988 (2021) 164897, https://doi.org/10.1016/j.nima.2020.164897.
"Low-energy X-ray performance of SOI pixel sensors for astronomy, ‘‘XRPIX’’", Ryota Kodama, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Yuki Amano, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Masataka Yukumoto, Takahiro Hida, Yasuo Arai, Ikuo Kurachi, Takayoshi Kohmura, Kouichi Hagino, Mitsuki Hayashida, Masatoshi Kitajima, Shoji Kawahito, Keita Yasutomi, Hiroki Kamehama, Nuclear Inst. and Methods in Physics Research, A 986 (2021) 164745, https://doi.org/10.1016/j.nima.2020.164745.
“Contribution of Interface State and Bulk Damages to the Dark Current Increase in SOI Pixel Sensor with Pinned Depleted Diode Structure”, Hisanori Suzuki; Ikuo Kurachi; Kazuhiko Hara, 2021 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 10.1109/NSS/MIC44867.2021.9875831.

"Minimization of charge sharing effects in a counting type SOI pixel detector for synchrotron radiation", L. Song, Y. Arai, Y. Lu, R. Nishimura, R. Hashimoto, S. Kishimoto, Y. Zhou, T. Miyoshi, Z. Wu and Q. Ouyang, 2020, JINST 15 P01037, https://doi.org/10.1088/1748-0221/15/01/P01037
"Spectroscopic performance improvement of SOI pixel detector for X-ray astronomy by introducing Double-SOI structure", A. Takeda, K. Mori, Y. Nishioka, K. Fukuda,𝑎 M. Yukumoto, T. Hida, T.G. Tsuru, T. Tanaka, H. Uchida, H. Hayashi, S. Harada, T. Okuno, K. Kayama, Y. Arai, I. Kurachi, T. Kohmura, K. Hagino, K. Negishi, K. Oono, K. Yarita, H. Matsumura, , S. Kawahito, K. Kagawa, K. Yasutomi, S. Shrestha, S. Nakanishi and H. Kamehama, JINST, 15 (2020) P11001, Pixel2018, https://doi.org/10.1088/1748-0221/15/11/P11001
"Development of on-chip pattern processing in event-driven SOI pixel detector for X-ray astronomy with background rejection purpose", A. Takeda, K. Mori, Y. Nishioka, T. Hida, M. Yukumoto, Y. Kanemaru, S. Yonemura, Mieda, T. G. Tsuru, T. Tanaka, I. Kurachi, and Y. Arai, JINST_014P_1020(2020).
"Low-energy X-ray performance of SOI pixel sensors for astronomy, “XRPIX”", Ryota Kodama, Takeshi GoTsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Yuki Amano Ayaki Takeda, Koji Mori, Yusuke Nishioka, Masataka Yukumoto, Takahiro Hida, Yasuo Arai, Ikuo Kurachi, Takayoshi Kohmura, Kouichi Hagino, Mitsuki Hayashida, Masatoshi Kitajima, Shoji Kawahito, Hiroki Kamehama, https://doi.org/10.1016/j.nima.2020.164745
"Development of monolithic SOI pixel sensors capable of fine measurements of space and time", Hitoshi Murayama, Kazuhiko Hara, Hiroki Yamauchi, Ryuhei Abe, Shikie Iwanami, Kevin Watanabe, Yui Okada, Toru Tsuboyama, Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi, Junji Haba, Manabu Togawa, Yoichi Ikegami, Ryutaro Nishimura, Akimasa Ishikawa, Shun Ono b, Taohan Li, Miho Yamada, Nuclear Inst. and Methods in Physics Research, A 978 (2020)164417, https://doi.org/10.1016/j.nima.2020.164417.
"X-ray tri-axial stress analysis system using two monolithic SOI pixel detectors", Toshihiko Sasaki, Masayoshi Shin-ya, Shingo Mitsui, Ryutaro Nishimura, Kayoko Yanagi, Toshinobu Miyoshi, Yasuo Arai、Nuclear Inst. and Methods in Physics Research, A 979 (2020) 164426, https://doi.org/10.1016/j.nima.2020.164426.
"X-ray metal material evaluation using an SOI pixel detector", S. Mitsui, T. Sasaki, M. Shinya, Y. Arai, T. Miyoshi, R. Nishimura, Nuclear Inst. and Methods in Physics Research, A 979 (2020) 164376, https://doi.org/10.1016/j.nima.2020.164376
"Development of a neutron imaging sensor using INTPIX4-SOI pixelated silicon devices" Y. Kamiya, T. Miyoshi, H. Iwase, T. Inada, A. Mizushima, Y. Mita, K. Shimazoe, H. Tanaka, I. Kurachi, Y. Arai, Nuclear Instr. and Meth. A978(2020)164400, https://doi.org/10.1016/j.nima.2020.164400.
"Radiation damage effects on double-SOI pixel sensors for X-ray astronomy", Kouichi Hagino, Keigo Yarita, Kousuke Negishi, Kenji Oono, Mitsuki Hayashida, Masatoshi Kitajima, Takayoshi Kohmura, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Kazuho Kayama, Yuki Amano, Ryota Kodama, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Masataka Yukumoto, Takahiro Hida, Yasuo Arai, Ikuo Kurachi, Tsuyoshi Hamano, Hisashi Kitamura, Nuclear Instr. and Meth. A978(2020)164435, https://doi.org/10.1016/j.nima.2020.164435
"Belle II upgrade and the ILC with an SOI technology", Akimasa Ishikawa, Yasuo Arai, Jérôme Baudot, Junji Haba, Maciej Kachel, Ikuo Kurachi, Taohan Li, Shun Ono, Takehiro Takayanagi, Ayaki Takeda, Toru Tsuboyama, Miho Yamada, Nuclear Instr. and Meth. A978(2020)164404, https://doi.org/10.1016/j.nima.2020.164404
"Total Ionization Dose Effects and Compensation in a Counting Type Double SOI Pixel Sensor", Yunpeng Lu, Longlong Song, Yunpeng,Toshinobu Miyoshi, Ikuo Kurachi, Ryutaro Nishimura,Ryo Hashimoto, Yasuo Arai, Shunji Kishimoto, Yang Zhou, Zhigang Wu, Qun Ouyang, Accepted: 28 February 2020, 2020_JINST_15_C04026, https://doi.org/10.1088/1748-0221/15/04/C04026
"Minimization of charge sharing effects in a counting type SOI pixel detector for synchrotron radiation", L. Song, Y. Arai, Y. Lu, R. Nishimura, R. Hashimoto, S. Kishimoto, Y. Zhou, T. Miyoshi, Z. Wu and Q. Ouyang, 2020 JINST 15 P01037.
"Development of integration-type silicon-on-insulator monolithic pixel detectors using a float zone silicon", S. Mitsui, Y. Arai, T. Miyoshi, A. Takeda, Nuclear Inst. and Methods in Physics Research, A 953 (2020) 163106. https://doi.org/10.1016/j.nima.2019.163106.

"Proposal of Silicon on Insulator Reach through APDs for soft X-ray imaging optimized by TCAD simulation", Ryutaro Hamasaki, Akihiro Koyama, Kenji Shimazoe, Toshinobu Miyoshi, Toru Tsuboyama, Ikuo Kurachi, Shunji Kishimoto and Yasuo Arai, Proc. 5th Int. Workshop New Photon-Detectors (PD18), JPS Conf. Proc. 27, 012017 (2019) , https://doi.org/10.7566/JPSCP.27.012017.
"Measurement of Charge Cloud Size in X-ray SOI Pixel Sensors", Kouichi Hagino, Kenji Oono, Kousuke Negishi, Keigo Yarita, Takayoshi Kohmura, Takeshi G. Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Sodai Harada, Tomoyuki Okuno, Kazuho Kayama, Yuki Amano, Hideaki Matsumura, Koji Mori, Ayaki Takeda, Yusuke Nishioka, Kohei Fukuda, Takahiro Hida, Masataka Yukumoto, Yasuo Arai, Ikuo Kurachi, Toshinobu Miyoshi, and Shunji Kishimoto, IEEE Trans. on Nucl. Sci. (2019)
“Development of a new high-speed readout system for SOI pixel detectors”, Ryutaro Nishimura, Yasuo Arai, Toshinobu Miyoshi, Keiichi Hirano, Shunji Kishimoto, Ryo Hashimoto, Yunpeng Lu, Longlong Song, Qun Ouyang, NIM A924(2019)480-484. doi:/10.1016/j.nima.2018.09.120
“Total ionizing dose effects on the SOI pixel sensor for X-ray astronomical use”, Koji Mori, Yusuke Nishioka, Ayaki Takeda, Nobuaki Takebayashi, Ryota Takenaka, Seina Sakakura, Shoma Yokoyama, Kohei Fukuda, Masataka Yukumoto, Takahiro Hida, Takeshi G Tsuru, Takaaki Tanaka, Hideaki Matsumura, Hideki Hayashi, Takayoshi Kohmura, Shinya Nakashima, Yasuo Arai, and Ikuo Kurachi, NIM A924(2019)473-479. doi: 10.1016/j.nima.2018.07.057.
“Performance of the Silicon-On-Insulator pixel sensor for X-ray astronomy, XRPIX6E, equipped with pinned depleted diode structure”, S. Harada, T. G. Tsuru, T. Tanaka, H. Uchida, H. Matsumura, K. Tachibana, H. Hayashi, A. Takeda, K. Mori, Y. Nishioka, N. Takebayashi, S. Yokoyama, K. Fukuda, Y. Arai, I. Kurachi, S. Kawahito, K. Kagawa, K. Yasutomi, S. Shrestha, S. Nakanishi, H. Kamehama, T. Kohmura, K. Hagino, K. Negishi, K. Oono, and K. Yarita, NIM A924(2019)468-472. doi: 10.1016/j.nima.2018.09.127.
"X-ray response evaluation in subpixel level for X-ray SOI pixel detectors", K. Negishi, T. Kohmura, K. Hagino, T. Kogiso, K. Oono, K. Yarita, A. Sasaki, K. Tamasawa, T. Go Tsuru, T. Tanaka, H. Matsumura, K. Tachibana, H. Hayashi, S. Harada, K. Mori, A. Takeda, Y. Nishioka, N. Takebayashi, S. Yokoyama, K. Fukuda, Y. Arai, T. Miyoshi, S. Kishimoto, I. Kurachi, NIM A924(2019)462-467, doi:/10.1016/j.nima.2018.06.073
“Proton radiation damage experiment for X-ray SOI pixel detectors”, Keigo Yarita, Takayoshi Kohmura, Kouichi Hagino, Taku Kogiso, Kenji Oono, Kousuke Negishi, Koki Tamasawa, Akinori Sasaki, Satoshi Yoshiki, Takeshi Go Tsuru, Takaaki Tanaka, Hideaki Matsumura, Katsuhiro Tachibana, Hideki Hayashi, Sodai Harada, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Toshinobu Miyoshi, Ikuo Kurachi, Tsuyoshi Hamano, and the SOIPIX group, NIM A924(2019)457-461. DOI:10.1016/j.nima.2018.09.057
“Study on application of a monolithic SOI pixel detector to residual stress measurement using X-rays”, Toshihiko Sasaki, Shingo Mitsui, Masayoshi Shinya, Kayoko Yanagi, Ryutaro Nishimura, Toshinobu Miyoshi, Yasuo Arai, NIM A924(2019)452-456. doi:/10.1016/j.nima.2018.07.084
“Studies of radioactive background in SOI pixel detector for solar axion search experiment”, Yoshiyuki Onuki, Johnny Alejandro Mora Grimaldo, Tatsuki Ose, Hiroaki Aihara, Yoshizumi Inoue, Yoshio Kamiya, Kenji Shimazoe, Takeshi Go Tsuru, Takaaki Tanaka, Kentaro Miuchi, Ayaki Takeda Yasuo Arai, NIM A924(2019)448-451. doi:/10.1016/j.nima.2018.07.056
“Development of Debye-ring measurement system using SOI pixel detector”, S. Mitsui, T. Sasaki, Y. Arai, T. Miyoshi, R. Nishimura, NIM A924(2019)441-447. doi:/10.1016/j.nima.2018.09.147
“A 250-um pitch 36-channel silicon photo multiplier array prototype using silicon on insulator technology”, A. Koyama, R. Hamasaki, K. Shimazoe, H. Takahashi, T. Takeshita, I. Kurachi, T. Miyoshi, I. Nakamura, S. Kishimoto, Y. Arai, NIM A924(2019)436-440. doi:/10.1016/j.nima.2018.07.074
“Development of a monolithic pixel sensor based on SOI technology for the ILC vertex detector”, Shun Ono, Miho Yamada, Manabu Togawa, Yasuo Arai, Toru Tsuboyama, Ikuo Kurachi, Yoichi Ikegami, Kazuhiko Hara, Taohan Li, Akimasa Ishikawa, NIM A924(2019)431-435. doi:/10.1016/j.nima.2018.06.075
“High spatial resolution small angle X-ray scattering experiments using SOPHIAS detector”, Hideaki Takagi, Ryo Hashimoto, Noriyuki Igarashi, Katsuhiro Yamamoto, Shunji Kishimoto, NIM A924(2019)417-421. doi:/10.1016/j.nima.2018.09.073
“A prototype SOI pixel sensor for CEPC vertex”, Zhigang Wu, Yunpeng Lu, Yang Zhou, Jing Dong, Longlong Song, Qun Ouyang, NIM A924(2019)409-416. doi:/10.1016/j.nima.2018.06.059
“Evaluation of Kyoto’s event-driven X-ray astronomical SOI pixel sensor with a large imaging area”, Hideki Hayashi, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Hideaki Matsumura, Katsuhiro Tachibana, Sodai Harada, Ayaki Takeda, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Shoma Yokoyama, Kohei Fukuda, Yasuo Arai, Ikuo Kurachi, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Sumeet Shrestha, Syunta Nakanishi, Hiroki Kamehama, Takayoshi Kohmura, Kouichi Hagino, Kousuke Negishi, Kenji Oono, Keigo Yarita, NIM A924(2019)400-403. doi:10.1016/j.nima.2018.09.042.
"R&D status of SOI-based pixel detector with 3D stacking readout", Toru Tsuboyama, Shun Ono, Miho Yamada, Yasuo Arai, Manabu Togawa, Ikuo Kurachi, Yoich iIkegami, Kazuhiko Hara, Akimasa Ishikawa, Masayuki Ikebe, Makoto Motoyoshi, NIM A924(2019)422-425, doi:/10.1016/j.nima.2018.08.089
"Radiation hardness of silicon-on-insulator pixel devices", Kazuhiko Hara*,1, Wataru Aoyagi, Daisuke Sekigawa, Shikie Iwanami, Shunsuke Honda, Toru Tsuboyama, Yasuo Arai, Ikuo Kurachi, Toshinobu Miyoshi, Miho Yamada, Yoichi Ikegami, NIM A924(2019)426-430, doi:10.1016/j.nima.2018.05.077
"Investigation of radiation hardness improvement by applying back-gate bias for FD-SOI MOSFETs", Ikuo Kurachi*, Kazuo Kobayashi, Masao Okihara, Hiroki Kasai, Takaki Hatsui, Kazuhiko Hara, Toshinobu Miyoshi, Yasuo Arai, NIM A924(2019)404-408, doi:10.1016/j.nima.2018.05.068.

"Development of Superconducting Tunnel Junction Far-Infrared Photon Detector for Cosmic Background Neutrino Decay Search - COBAND Experiment", S. H. Kima, Y. Takeuchi, T. Iida, K. Takemasa, K. Nagata, C. Asano, R. Wakasa, S. Yagi, A. Kasajima, H. Ikeda, T. Wada, K. Nagase, S. Matsuura, M. Hazumi, Y. Arai, I. Kurachi, T. Yoshida, M. Sakai, T. Nakamura, W. Nishimura, K. Kiuchi, S. Mima, Y. Kato, M. Ohkubo, M. Ukibe, S. Shiki, G. Fujii, H. Ishino, A. Kibayashi,S. Kawahito, E. Ramberg , P. Rubinov, D. Sergatskov and S.B. Kim, POS(ICHEP2018)427.
"A high-resolution CdTe imaging detector with multi-pinhole optics for in-vivo molecular imaging", Shin’ichiro Takeda, Miho Katsuragawa, Tadashi Orita, Fumiki Moriyama,Yasuo Arai, Hirotaka Sugawara, Sayuri Oshita, Goro Yabu, Shin Watanabe,Tadayuki Takahashi, Lars R. Furenli, Nuclear Instruments and Methods in Physics Research Section A, Vol. 912, December 2018, Pages 57-60, DOI: 10.1016/j.nima.2017.10.037
"Silicon-on-insulator monolithic pixel technology for radiation image sensors", Y. Arai, Jpn. J. Appl. Phys. 57 1002A1(2018), doi:10.7567/JJAP.57.1002A1.
“P-channel Super Steep Subthreshold Slope PN-Body Tied SOI FET: Possibility of CMOS”,T. Mori, * J. Ida, T. Yoshida , and Y. Arai, IEEE Electron Devices Technology and Manufacturing Conference (EDTM), 8A-3,pp190-192, 2018, 3/16/2018　
“Evaluation of Qss on SOI Back Si/SiO2 Interface by Newly Designed Charge Pumping Method-TEG”, K. Takeda, *J. Ida, T. Mori1 and Y. Arai, 31st IEEE International Conference on Microelectronic Test Structures (ICMTS), 8.1 pp149-152, 3/21/2018
“Drain Current Enhancement Effect on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET”, Takayuki Mori, * Jiro Ida, Wataru Yabuki, Shunichi Nakano, Hiroki Endou, and Yasuo Arai,　 2018 IEEE Silicon Nanoelectronics Workshop (IEEE SNW), P1-17, pp1-2, 2018
"First Experimental Confirmation of Ultralow Voltage Rectification by Super Steep Subthreshold Slope “PN-Body Tied SOI-FET” for High Efficiency RF Energy Harvesting and Ultralow Voltage Sensing", Shun Momose, *Jiro Ida, Takuya Yamada,Takayuki Mori, Koichiro Ishibashi, and Yasuo Arai, , IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) ,10.4, pp1-3, 2018, DOI: 10.1109/S3S.2018.8640201
"A Silicon-on-Insulator-Based Dual-Gain Charge-Sensitive Pixel Detector for Low-Noise X-ray Imaging for Future Astronomical Satellite Missions", S. Shrestha, S. Kawahito, H. Kamehama, S. Nakanishi, K. Yasutomi, K. Kagawa, N. Teranishi, A. Takeda, T. G. Tsuru, I. Kurachi and Y. Arai, Sensors 2018, 18, 1789; doi:10.3390/s18061789.
"Performance study of double SOI image sensors", T. Miyoshi, Y. Arai, Y. Fujita, R. Hamasaki, K. Hara, Y. Ikegami, I. Kurachi, R. Nishimura, S. Ono, K. Tauchi, 2018 J. Inst. 13 C02005, doi:10.1088/1748-0221/13/02/C02005
"Diode Characteristics of a Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for Energy Harvesting Applications", Takayuki Mori; Jiro Ida; Shun Momose; Kenji Itoh; Koichiro Ishibashi; Yasuo Arai, IEEE Journal of the Electron Devices Society, 2018, Volume: 6, pp. 565 - 570. doi:10.1109/JEDS.2018.2824344
"Development of monolithic pixel detector with SOI technology for the ILC vertex detector", M. Yamada, S. Ono, T. Tsuboyama, Y. Arai, J. Haba, Y. Ikegami, I. Kurachi, M. Togawa, T. Mori, W. Aoyagi, S. Endo, K. Hara, S. Honda and D. Sekigawa, JINST_031P_1017 [IWORID2017], 2018_JINST_13_C01037. doi:10.1088/1748-0221/13/01/C01037
"X-ray response evaluation in subpixel level for X-ray SOI pixel detectors", K. Negishi, T. Kohmura, K. Hagino, T. Kogiso, K. Oono, K. Yarita, A. Sasaki, K. Tamasawa, T. Go Tsuru, T. Tanaka, H. Matsumura, K. Tachibana, H. Hayashi, S. Harada, K. Mori, A. Takeda, Y. Nishioka, N. Takebayashi, S. Yokoyama, K. Fukuda, Y. Arai, T. Miyoshi, S. Kishimoto, I. Kurachi, Nuclear Inst. and Methods in Physics Research, A (2018), https://doi.org/10.1016/j.nima.2018.06.073
"First Experimental Confirmation of Ultralow Voltage Rectification by Super Steep Subthreshold Slope PN-Body Tied SOI-FET for High Efficiency RF Energy Harvesting and Ultralow Voltage Sensing", Shun Momose, *Jiro Ida, Takuya Yamada,Takayuki Mori, Koichiro Ishibashi, and Yasuo Arai, , IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (IEEE S3S) ,10.4, pp1-3, 2018
"Performance of the Silicon-On-Insulator pixel sensor for X-ray astronomy, XRPIX6E, equipped with pinned depleted diode structure", S. Harada, T. G. Tsuru, T. Tanaka, H. Uchida, H. Matsumura, K. Tachibana, H. Hayashi, A. Takeda, K. Mori, Y. Nishioka, N. Takebayashi, S. Yokoyama, K. Fukuda, Y. Arai, I. Kurachi, S. Kawahito, K. Kagawa, K. Yasutomi, S. Shrestha, S. Nakanishi, H. Kamehama, T. Kohmura, K. Hagino, K. Negishi, K. Oono, and K. Yarita, NIM A, in press 2018.
"Total ionizing dose effects on the SOI pixel sensor for X-ray astronomical use", Koji Mori, Yusuke Nishioka, Ayaki Takeda, Nobuaki Takebayashi, Ryota Takenaka, Seina Sakakura, Shoma Yokoyama, Kohei Fukuda, Masataka Yukumoto, Takahiro Hida, Takeshi G Tsuru, Takaaki Tanaka, Hideaki Matsumura, Hideki Hayashi, Takayoshi Kohmura, Shinya Nakashima, Yasuo Arai, and Ikuo Kurachi. NIM A, in press, 2018.

"Gate-Controlled Diode Characteristics of Super-Steep Subthreshold Slope PN-Body Tied SOI-FET for High-Efficiency RF Energy Harvesting", Takayuki Mori, Jiro Ida, Shun Momose, Kenji Itoh, Koichiro Ishibashi, and Yasuo Arai, 017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct. 2017. DOI: 10.1109/S3S.2017.8309230
"Evaluation of a pulse counting type SOI pixel using synchrotron radiation X-ray", R. Hashimoto, Y. Arai, N. Igarashi, R. Kumai, Y. Lu, T. Miyoshi, R. Nishimura, Q. Ouyang, Y. Zhou and S. Kishimoto, 2017 JINST 12 C03061. doi:10.1088/1748-0221/12/03/C03061.
“Development of electron-tracking Compton imaging system with 30-μm SOI pixel sensor.”, Y. Yoshihara, K. Shimazoe, Y. Mizumachi, H. Takahashi, K. Kamada, A. Takeda, T. Tsuru and Y. Arai, 2017 J. Inst. 12 C01045, doi:10.1088/1748-0221/12/01/C01045
“Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology”, Y. Zhou, Y. Lu, R. Hashimoto, R. Nishimura, S. Kishimoto, Y. Arai and Q. Ouyang, JINST 12(2017) C01037; doi:10.1088/1748-0221/12/01/C01037
“Evaluation of a pulse counting type SOI pixel using synchrotron radiation”, R. Hashimoto, Y. Arai, N. Igarashi, R. Kumai, Y. Lu, T. Miyoshi, R. Nishimura, Q. Ouyang, Y. Zhou and S. Kishimoto, on behalf of SOIPIX collaboration,JINST 12(2017) C03061; doi:10.1088/1748-0221/12/03/C03061.
“Front end electronics of double SOI X-ray imaging sensors”, Toshinobu Miyoshi, Yasuo. Arai, Yowichi Fujita, Kazuhiko Hara, Yoichi Ikegami, Ikuo Kurachi, Kazuya Tauchi, Toru Tsuboyama, Miho Yamada, Shun Ono, Ryutaro Nishimura, and Ryutaro Hamasaki, iWoRiD 2016, 2017 JINST 12 C02004, doi:10.1088/1748-0221/12/02/C02004
"Performance of the INTPIX6 SOI pixel detector", Y. Arai, Sz. Bugiel, R. Dasgupta, M. Idzik, P. Kapusta, W. Kucewicz, T. Miyoshi and M. Turala, 2017 J. Inst. 12 C01028 doi:10.1088/1748-0221/12/01/C01028
"Development of high-speed X-ray imaging system for SOI pixel detector", R. Nishimura, Y. Arai, T. Miyoshi, K. Hirano, S. Kishimoto, R. Hashimoto, International Workshop on Advanced Image Technology, Penang, Malaysia , 2017.1.8-10, Session Poster 5B, ID:64.
"SOI monolithic pixel technology for radiation image sensor", Y. Arai, T. Miyoshi, and I. Kurachi, 2017 IEEE Electron Device Meeting (IEDM17), Dec. 4-6, San Francisco, Invited Talk, Session 16.2, pp. 389-392. Pages: 16.2.1 - 16.2.4. doi:10.1109/IEDM.2017.8268401
" High Resolution SOI Pixel Detector ~ overview ~", Dec. 11, 2017, HSTD11 & SOIPIX2017@OIST, Invited Talk, Yasuo Arai
"A Low-Noise X-ray Astronomical Silicon-On-Insulator Pixel Detector Using a Pinned Depleted Diode Structure", Hiroki Kamehama, Shoji Kawahito, Sumeet Shrestha, Syunta Nakanishi, Keita Yasutomi, Ayaki Takeda, Takeshi Go Tsuru and Yasuo Arai, Sensors 2018, 18, 27, doi:10.3390/s18010027.
"Fine-Pixel Detector FPIX Realizing Sub-Micron Spatial Resolution Developed Based on FD-SOI Technology", Daisuke Sekigawa, Shun Endo, Wataru Aoyagi, Kazuhiko Hara, Shunsuke Honda, Toru Tsuboyama, Miho Yamada, Shun Ono, Manabu Togawa, Yoichi Ikegmi, Yasuo Arai, Ikuo Kurachi, Tsunenobu Miyoshi, Junji Haba and Kazunori Hanagki, May 2017, TIPP2017, Proceedings of International Conference on Technology and Instrumentation in Particle Physics 2017, DOI:10.1007/978-981-13-1316-5_62
"Gate controlled diode characteristics of super steep subthreshold slope PN-body tied SOI-FET for high efficiency RF energy harvesting", Shun Momose; Jiro Ida; Takayuki Mori; Takahiro Yoshida; Jumpei Iwata; Takashi Horii; Takahiro Furuta; Kenji Itoh; Koichiro Ishibashi; Yasuo Arai, 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2017, pp. 1 - 3.
"Evaluation of double photon coincidence Compton imaging method with GEANT4 simulation", YuriYoshihara*, KenjiShimazoe, YukiMizumachi, HiroyukiTakahashi, Nuclear Instruments and Methods in Physics Research A873(2017)51–55. doi:10.1016/j.nima.2017.05.039
"Development of electron-tracking Compton imaging system with 30-_m SOI pixel sensor", Y. Yoshihara, K. Shimazoe, Y. Mizumachi, H. Takahashi, K. Kamada, A. Takeda, T. Tsuru, and Y. Arai, 2017 JINST 12 C01045, doi:10.1088/1748-0221/12/01/C01045.
"Recent Developments of SOI Pixel Devices", K. Hara,* D. Sekigawa, S. Endo, W. Aoyagi, S. Honda, T. Tsuboyama, M. Yamada, S. Ono, M. Togawa, Y. Ikegami, Y. Arai, I. Kurachi, T. Miyoshi, J. Haba, K. Hanagaki, The 26th International Workshop on Vertex Detectors – Vertex 2017, PoS(Vertex2017)035.
Takahiro Yoshida, Jiro Ida, Takashi Horii, Masao Okihara and Yasuo Arai、“Super Steep Subthreshold Slope PN-Body Tied SOI FET’s of Ultra Low Drain Voltage=0.1V with Body Bias below 1.0V”, 6a.4 pp1-3, 2016 SOI-3D-Subtreshold Microelectronics Unified Conference (IEEE S3S CONFERENCE), 2016
"SOI Monolithic Pixel Detector Technology”, Y. Arai, The 25th International workshop on vertex detectors, September 26-30, 2016, La Biodola, Isola d’Elba, ITALY, PoS(Vertex 2016)029.
"A broadband x-ray imaging spectroscopy with high-angular resolution: the FORCE mission”, Koji Mori, Takeshi Go Tsuru, Kazuhiro Nakazawa, Yoshihiro Ueda, Takashi Okajima, Hiroshi Murakami, Hisamitsu Awaki, Hironori Matsumoto, Yasushi Fukazawa, Hiroshi Tsunemi, Tadayuki Takahashi, William W. Zhang, Proc. SPIE 9905, Space Telescopes and Instrumentation 2016: Ultraviolet to Gamma Ray, 99051O (August 1, 2016); doi: 10.1117/12.2231262
“Development of electron-tracking Compton imaging system with 30-μm SOI pixel sensor.”, Yoshihara, Y., Shimazoe, K., Mizumachi, Y., Takahashi, H., Kamada, K., Takeda, A., Tsuru, T. and Arai, Y., 2017. Journal of Instrumentation, 12(01), p.C01045
“Synchrotron beam test of a photon counting pixel prototype based on Double-SOI technology”,Y. Zhou, Y. Lu, R. Hashimoto, R. Nishimura, S. Kishimoto, Y. Arai and Q. Ouyang, JINST 12(2017) C01037; doi.org/10.1088/1748-0221/12/01/C01037
“Evaluation of a pulse counting type SOI pixel using synchrotron radiation”, R. Hashimoto, Y. Arai, N. Igarashi, R. Kumai, Y. Lu, T. Miyoshi, R. Nishimura, Q. Ouyang, Y. Zhou and S. Kishimoto, on behalf of SOIPIX collaboration,JINST 12(2017) C03061; doi.org/10.1088/1748-0221/12/03/C03061

“Test results of a counting type SOI device for a new X-ray area detector”,R. Hashimoto, Y. Arai, N. Igarashi, R. Kumai, T. Miyoshi and S. Kishimoto, AIP Conference Proceedings 1741 (2016) 040031; doi: 10.1063/1.4952903
"Tradeoff Between Low-Power Operation and Radiation Hardness of Fully Depleted SOI pMOSFET by Changing LDD Conditions", Ikuo Kurachi, Kazuo Kobayashi, Marie Mochizuki, Masao Okihara, Hiroki Kasai,Takaki Hatsui, Kazuhiko Hara, Toshinobu Miyoshi, and Yasuo Arai, IEEE Transactions on Electron Devices, Vol. 63, No. 6, pp. 2293-2298, June 2016. doi 10.1109/TED.2016.2552486.
Confirmation of SS=35μV/dec over 3 Decades of Drain Current and Hole Accumulation Effect on PN-Body Tied SOI Super Steep SS FET’s, Takashi Horii, Jiro Ida, Takahiro Yoshida, Masao Okihara and Yasuo Arai. IEEE SILICON NANOELECTRONICS WORKSHOP 2016, June 12-13, 2016, Honolulu, USA.
A Demonstration of TIA Using FD-SOI CMOS OPAMP for Far-Infrared Astronomy, Koichi Nagase, Takehiko Wada, Hirokazu Ikeda, Yasuo Arai, Morifumi Ohno, Misaki Hanaoka, Hidehiro Kanada, Shinki Oyabu, Yasuki Hattori, Sota Ukai, Toyoaki Suzuki, Kentaroh Watanabe, Shunsuke Baba, Chihiro Kochi, Keita Yamamoto. J Low Temp Phys, DOI 10.1007/s10909-016-1551-7
Development for Germanium Blocked Impurity Band Far-Infrared Image Sensors with Fully-Depleted Silicon-On-Insulator CMOS Readout Integrated Circuit, T. Wada, Y. Arai, S. Baba, M. Hanaoka, Y. Hattori, H. Ikeda, H. Kaneda, C. Kochi, A. Miyachi, K. Nagase, H. Nakaya, M. Ohno, S. Oyabu, T. Suzuki, S. Ukai, K.Watanabe, K. Yamamoto. J Low Temp Phys, DOI 10.1007/s10909-016-1522-z.
Development of an Event-driven SOI Pixel Detector for X-ray Astronomy, - Improvement of an Intra-chip Readout Circuit for Low Noise Performance -, Ayaki Takeda, T.G.Tsuru, T.Tanaka, H.Matsumura, M.Itou, S.Ohmura, Y.Arai, K.Mori, Y.Nishioka, R.Takenaka, T.Kohmura, K.Tamasawa, S.Nakashima, S.Kawahito, K.Kagawa, H.Kamehara, S.Shrestha. 14th The Vienna Conference on Instrumentation (VCI2016), Feb. 15-19, 2016.
Development of a pixel sensor with fine space-time resolution based on SOI technology for the ILC vertex detector, Shun Ono, Manabu Togawa, Ryoji Tsuji, Teppei Mori, Miho Yamada, Yasuo Arai, Toru Tsuboyama, Kazunori Hanagaki, 14th The Vienna Conference on Instrumentation (VCI2016), Feb. 15-19, 2016, Nuclear Instruments and Methods in Physics Research, Section A, March 17, 2016.
Development of SOI Pixel Detectors and their Applications, Yasuo Arai. International symposium on radiation instruments and users (ISRD) 2016. Tsukuba Japan, Jan. 18-21, 2016.
Development of Pixelated Linear Avalanche Integration Detector using Silicon on Insulator Technology, Akihiro Koyama, Kenji Shimazoe, Hiroyuki Takahashi, Ryutaro Hamasaki, Tadashi Orita, Yoshiyuki Onuki, Wataru Otani, Tohru Takeshita, Ikuo Kurachi, Toshinobu Miyoshi, Isamu Nakamura, Yasuo Arai. Proceedings on International symposium on radiation instruments and users (ISRD) 2016. Tsukuba Japan, Jan. 18-21, 2016.

Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V, Jiro Ida, Takayuki Mori, Yousuke Kuramoto, Takashi Horii, Takahiro Yoshida, Kazuma Takeda, Hiroki Kasai, Masao Okihara, Yasuo Arai. 2015 IEEE International Electron Devices Meeting (IEDM), Page 22.7.1 - 22.7.4, DOI: 10.1109/IEDM.2015.7409761.
Compensation for radiation damage for SOI pixel detector via tunneling, M. Yamada, Y. Arai, Y. Fujita, R. Hamasaki, Y. Ikegami, I. Kurachi, R. Nishimura, K. Tauchi and T. Tsuboyama,proceedings of HSTD10, a special issue of Nucl. Instrum. Meth. A.
Reduction of cross-talks between circuit and sensor layer in the Kyoto's X-ray astronomy SOI pixelsensors with Double-SOI wafer, Shunichi Ohmura, Takeshi Go Tsuru, Takaaki Tanaka, Hiroyuki Uchida, Ayaki Takeda, Hideaki Matsumura, Makoto Ito, Yasuo Arai, Ikuo Kurachi, Toshinobu Miyoshi, Shinya Nakashima, Koji Mori, Yusuke Nishioka, Nobuaki Takebayashi, Koki Noda, Takayoshi Kohmura, Kouki Tamasawa, Yusuke Ozawa, Tadashi Sato, Takahiro Konno, Shoji Kawahito, Keiichiro Kagawa, Keita Yasutomi, Hiroki Kamehama, Sumeet Shrestha, Kazuhiko Hara, Shunsuke Honda. 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, Nuclear Instruments and Methods in Physics Research A (2016), http://dx.doi.org/10.1016/j.nima.2016.04.024.
The first back-side illuminated types of Kyoto's X-ray astronomy SOIPIX, Makoto Itou, Takeshi Go Tsuru, Takaaki Tanaka, Ayaki Takeda, Hideaki Matsumura, Shunichi Ohmura, Hiroyuki Uchida, Shinya Nakashima, Yasuo Arai, Ikuo Kurachi, Koji Mori, Ryota Takenaka, Yusuke Nishioka, Takayoshi Kohmura, Koki Tamasawa, Craig Tindall. 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, Nuclear Instruments and Methods in Physics Research A (2016), http://dx.doi.org/10.1016/j.nima.2016.04.012.
First results of a Double-SOI pixel chip for X-ray imaging Yunpeng Lu a,n, Qun Ouyang a, Yasuo Arai b, Yi Liu a, Zhigang Wu a, Yang Zhou, 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, Nuclear Instruments and Methods in Physics Research A (2016), http://dx.doi.org/10.1016/j.nima.2016.04.022.
Development of an X-ray Imaging system with SOI Pixel Detectors, Ryutaro NISHIMURA, Yasuo ARAI, Toshinobu MIYOSHI, Keiichi HIRANO, Shunji KISHIMOTO, Ryo HASHIMOTO. 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, Nuclear Instruments and Methods in Physics Research A (2016), http://dx.doi.org/10.1016/j.nima.2016.04.036.
Characteristicsofnon-irradiatedandirradiateddoubleSOIintegration type pixelsensor, M. Asano, D.Sekigawa, K.Hara, W.Aoyagi, S.Honda, N.Tobita, Y.Arai, T.Miyoshi, I.Kurachi, T.Tsuboyama, M.Yamada. Nuclear Instruments and Methods in Physics Research A (2016), 10th International Symposium on the Development and Application of Semiconductor Tracking detectors (HSTD10), Sep. 25 – 29, 2015, Xi'an China, http://dx.doi.org/10.1016/j.nima.2016.03.095.
Advanced monolithic pixel sensors using SOI technology, Toshinobu Miyoshi, Yasuo Arai, Mari Asano, Yowichi Fujita, Ryutaro Hamasaki, Kazuhiko Hara, Shunsuke Honda, Yoichi Ikegami, Ikuo Kurachi, Shingo Mitsui, Ryutaro Nishimura, Kazuya Tauchi, Naoshi Tobita, Toru Tsuboyama, Miho Yamada. 13th Pisa Meeting on Advanced Detectors, 24–30 May 2015 La Biodola, Isola d’Elba (Italy), Nuclear Instruments and Methods in Physics Research Section A, http://dx.doi.org/10.1016/j.nima.2015.11.109.
Evaluation of 0.2um SOI Based Super Steep Subthreshold Slope Device for Sensor and Ultra Low Power Applications, Yosuke KURAMOTO, Jiro IDA, Masazumi KOYAMA, Keita KATSUTI and Yasuo ARAI. The 6th International Conference on Integrated Circuits, Design, and Verification (ICDV 2015), August 10 - 11, 2015 – Ho Chi Minh city, Vietnam (http://www.uet.vnu.edu.vn/icdv) .
Improvement of spectroscopic performance using a charge-sensitive amplifier circuit for an X-ray astronomical SOI pixel detector, A. Takeda, T.G. Tsuru, T. Tanaka, H. Uchida, H. Matsumura, Y. Arai, K. Mori, Y. Nishioka, R. Takenaka, T. Kohmura, S. Nakashima, S. Kawahito, K. Kagawa, K. Yasutomi, H. Kamehama and S. Shrestha, PIXEL 2014 INTERNATIONAL WORKSHOP SEPTEMBER 1–5, 2014, NIAGARA FALLS, CANADA, 2015 JINST 10 C06005, doi:10.1088/1748-0221/10/06/C06005.
Improving charge-collection efficiency of SOI pixel sensors for X-ray astronomy, Hideaki Matsumura, Takeshi Go Tsuru, Takaaki Tanaka, Ayaki Takeda, Yasuo Arai, Koji Mori, Yusuke Nishioka, RyotaTakenaka, Takayoshi Kohmura,Shinya Nakashima, Takaki Hatsui, YoshikiKohmura, DaiTakei, Takashi Kameshima, NIMA794(2015)255-259. http://dx.doi.org/10.1016/j.nima.2015.05.008.
Development of Superconducting Tunnel Junction detectors as a far-infrared photon-by-photon spectrometer for neutrino decay search, Yuji Takeuchi, Shin-Hong Kim, Kenichi Takemasa, Kenji Kiuchi, Kazuki Nagata, Kota Kasahara, Takuya Okudaira, Tatsuya Ichimura, Masahiro Kanamaru, Kouya Moriuchi, Ren Senzaki, Shunsuke Yagi, Hirokazu Ikeda, Shuji Matsuura, Takehiko Wada, Takuo Yoshida, Shota Komura, Keisuke Orikasa, Ryuta Hirose, Yukihiro Kato, Masashi Hazumi, Yasuo Arai, Shigetomo Shiki, Masahiro Ukibe, Go Fujii, Tetsuya Adachi, Masataka Ohkubo, Erik Ramberg, Jonghee Yoo, Mark Kozlovsky, Paul Rubinov, Dmitri Sergatskov, Hirokazu Ishino, Atsuko Kibayashi, Satoru Mima, Soo-Bong Kim. Proceedings of 2015 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), Page 551-555, DOI: 10.1109/I2MTC.2015.7151327
“Fully Depleted SOI Pixel Photo Detectors with Backgate Surface Potential Pinnning”, H. Kamehama, S. Shrestha, K. Yasutomi, K. Kagawa, A. Takeda, T-G. Tsuru, Y. Arai, S. Kawahito, 2015 International Image Sensor Workshop (IISW 2015), 3.05, pp.66-69, Vaals, The Netherlands, 2015.6.8.
Analysis of Effective Gate Length Modulation by X-Ray Irradiation for Fully Depleted SOI p-MOSFETs, Ikuo Kurachi, Kazuo Kobayashi, Masao Okihara, Member, IEEE, Hiroki Kasai, Takaki Hatsui, Kazuhiko Hara, Toshinobu Miyoshi, and Yasuo Arai. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 62, NO. 8, AUGUST 2015. Digital Object Identifier 10.1109/TED.2015.2443797.
A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging, Sumeet Shrestha; Hiroki Kamehama; Shoji Kawahito; Keita Yasutomi; Keiichiro Kagawa; Ayaki Takeda; Takeshi Go Tsuru; Yasuo Arai. Proc. SPIE 9593, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVII, 95930X (26 August 2015); Published: 26 August 2015, doi: 10.1117/12.2188019.
Characterization of high resolution CMOS monolithic active pixel detector in SOI technology, M.I. Ahmed, Y. Arai, S. Glab, M. Idzik, P. Kapusta, T. Miyoshi, A. Takeda and M. Turala, 2015 JINST 10 P05010, doi:10.1088/1748-0221/10/05/P05010
3D integration technology for sensor application using less than 5um-pitch gold cone-bump connection, M. Motoyoshi,T. Miyoshi,M. Ikebe and Y. Arai, J. of Instrumentation, Jinst 10 C03004 (2015), http://dx.doi.org/10.1088/1748-0221/10/03/C03004, PIXEL 2014 INTERNATIONAL WORKSHOP, SEPTEMBER 1–5, 2014, NIAGARA FALLS, CANADA
X-ray imaging detectors for synchrotron and XFEL sources, Takaki Hatsuia and Heinz Graafsm, IUCrJ(2015)2, doi:10.1107/S205225251500010X.
'Initial Characteristics and Radiation Damage Compensation of Double Silicon-on-Insulator Pixel Device', K. Hara, M. Asano, S. Honda, N. Tobita, Y. Arai, I. Kurachi, S. Mitsui, T. Miyoshi, T. Tsuboyama, , VERTEX2014, 15-19 Sep. 2014, Macha Lake, The Czech Republic. PoS(Vertex2014)033.
Prototype pixel detector in the SOI technology,M I Ahmed, S Glab, M Idzik, P J Kapusta and M Turala, 2014 1748-0221 9 C02010 doi:10.1088/1748-0221/9/02/C02010.
Monolithic SOI pixel detector with a wide dynamic range and a high frame rate for FEL-applications, I Peric, 2014 1748-0221 9 C05031 doi:10.1088/1748-0221/9/05/C05031.
Total Ionization Damage Compensations in Double Silicon-on-Insulator Pixel Sensors, Shunsuke HONDA, Kazuhiko HARA, Kohei TSUCHIDA, Mari ASANO, Naoshi TOBITA, Tatsuya MAEDA, Yasuo ARAI, Toshinobu MIYOSHI, Takeshi TSURU,Morifumi OHNO, Noriyuki MIURA, Hiroki KASAI, Masao OKIHARA, Technology and Instrumentation in Particle Physics 2014,2-6 June, 2014, Amsterdam, the Netherlands, PoS(TIPP2014)039
Bandgap voltage reference and temperature sensor in novel SOI technology Glab, S. ; Baszczyk, M. ; Dorosz, P. ; Idzik, M. ; Kucewicz, W. ; Sapor, M. ; Arai, Y. ; Miyoshi, T. ; Kapusta, P. ; Takeda, A. Signals and Electronic Systems (ICSES), 2014 International Conference on DOI: 10.1109/ICSES.2014.6948708, Publication Year: 2014 Page(s): 1 - 4
Glab, S.; Baszczyk, M.; Dorosz, P.; Idzik, M.; Kucewicz, W. ; Sapor, M.; Arai, Y. ; Miyoshi, T.; Kapusta, P.; Takeda, A., 'Synthetizable digital library created to facilitate design of SOI detectors in 200 nm SOI technology', 2014 International Conference on Signals and Electronic Systems (ICSES), DOI: 10.1109/ICSES.2014.6948729, 2014, pp. 1- 4.
X-ray generation by inverse Compton scattering at the superconducting RF test facility, NIMA Volume 772, 1 February 2015, Pages 26–33, Hirotaka Shimizua, Mitsuo Akemotoa, Yasuo Araia, Sakae Arakia, Alexander Arysheva, Masafumi Fukudaa, Shigeki Fukudaa, Junji Habaa, Kazufumi Haraa, Hitoshi Hayanoa, Yasuo Higashia, Yosuke Hondaa, Teruya Honmaa, Eiji Kakoa, Yuji Kojimaa, Yoshinari Kondoa, Konstantin Lekomtseva, Toshihiro Matsumotoa, Shinichiro Michizonoa, Toshinobu Miyoshia, Hirotaka Nakaia, Hiromitsu Nakajimaa, Kota Nakanishia, Shuichi Noguchia, Toshiyuki Okugia, Masato Satoa, Mikhail Sheveleva, Toshio Shishidoa, Tateru Takenakaa, Kiyosumi Tsuchiyaa, Junji Urakawaa,doi:10.1016/j.nima.2014.10.080

Development and Evaluation of an Event-Driven SOI Pixel Detector for X-Ray Astronomy, Ayaki Takeda, Takeshi Go Tsurua, Takaaki Tanakaa, Hideaki Matsumuraa,Yasuo Araib, Koji Moric, Yusuke Nishiokac, Ryota Takenakac, Takayoshi Kohmurad,Shinya Nakashimae, Shoji Kawahitof , Keiichiro Kagawaf , Keita Yasutomif ,Hiroki Kamehamaf and Sumeet Shresthaf, Technology and Instrumentation in Particle Physics 2014,2-6 June, 2014, Amsterdam, the Netherlands. PoS(TIPP2014)138, http://pos.sissa.it/
Y. Takeuchi et al., Development of Superconducting Tunnel Junction Detectors as a far-infrared single photon detector for neutrino decay search, TIPP 2014, PoS(TIPP2014)155, http://pos.sissa.it/cgi-bin/reader/conf.cgi?confid=213.
Development and Performance of Kyoto’s X-ray Astronomical SOI pixel (SOIPIX) sensor, Takeshi G. Tsuru, Hideaki Matsumuraa, Ayaki Takedaa, Takaaki Tanakaa, Shinya Nakashimab, Yasuo Araic, Koji Morid, Ryota Takenakad, Yusuke Nishiokad, Takayoshi Kohmurae, Takaki Hatsuif,g, Takashi Kameshimag, Kyosuke Ozakif, Yoshiki Kohmuraf, Tatsuya Wagaif, Dai Takeif, Shoji Kawahitoh, Keiichiro Kagawah, Keita Yasutomih, Hiroki Kamehamah, and Sumeet Shresthah. SPIE Astronomical Telescopes+ Instrumentation 2014.6.
Investigation of charge-collection efficiency of Kyoto׳s X-ray astronomical SOI pixel sensors, XRPIX, Hideaki Matsumura, Takeshi Go Tsuru, Takaaki Tanaka, Shinya Nakashima, Syukyo G. Ryu, Ayaki Takeda, Yasuo Arai, Toshinobu Miyoshi, NIMA, Volume 765, 21 November 2014, Pages 183-186, http://dx.doi.org/10.1016/j.nima.2014.05.025
Search for Cosmic Background Neutrino Decay, Shin-Hong Kim*, Yuji Takeuchi, Kazuki Nagata, Kota Kasahara, Takuya Okudaira, Hirokazu Ikeda1, Shuji Matsuura1, Takehiko Wada1, Hirokazu Ishino2, Atsuko Itsuki2, Satoshi Mima3, Takuo Yoshida4, Yukihiro Kato5, Masashi Hazumi6, Yasuo Arai6, Erik Ramberg7, Jong-Hee Yoo7 and Soo-Bong Kim8, Proceedings of the 12th Asia Pacific Physics Conference, JPS Conf. Proc. 1, 013127 (2014), 10.7566/JPSCP.1.013127
SOI Monolithic Pixel Detector, Toshinobu Miyoshi, M.I. Ahmed, Yasuo Arai, Yowichi Fujita, Yukiko, Ikemoto, Ayaki Takeda, and Kazuya Tauchi, 15th INTERNATIONAL WORKSHOP ON RADIATION IMAGING DETECTORS 23–27 JUNE 2013,PARIS, FRANCE, J. of Instrumentation, JINST_095P_1213, 2014, doi:10.1088/1748-0221/9/05/C05044.
Y. Arai, 'Progress on Silicon-on-Insulator Monolithic Pixel Process', VERTEX2013 Conf., Sep. 15-20 2013, Lake Starnberg, Germany, Proceedings of Science, PoS(Vertex 2013)021, http://pos.sissa.it/archive/conferences/198/021/Vertex2013_021.pdf, Invited Talk(2013.9.17).
Y. Arai and M. Motoyoshi, 'Application of 3D stacking technology to SOI radiation image sensor', IEEE Electrical Design of Advanced Packaging & Systems (EDAPS), Dec. 12-15, 2013, Nara, Todaiji, Japan.Invited Talk(2013.12.12). IEEE Part Number: CFP13EDP-USB, ISBN: 978-1-4799-2312-0, SS1-2, p.5-8.
Development of New Circuit for X-ray Astronomical SOI Pixel Detector - Improving Energy Resolution -, A. Takeda, Y. Arai, T. G. Tsuru, T. Tanaka, S. Nakashima, H. Matsumura, T. Imamura4, T. Ohmoto, A. Iwata, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, NPO2-124.
Basic Performance of SOI Pixel Detector for Radiation Monitor, Y. Sekiguchi, H. Hamagaki, T. Gunji1, Y. Arai, T. Imamura, T. Ohmoto, A. Iwata, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, NPO1-184.
Investigation of Geiger-Mode APD Using SOI Technology, D. Nio1, Y. Arai2, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, NPO1-86
Development of SOI Pixel Sensors for X-Ray Astronomy, T. Tanaka1, S. Nakashima1, H. Matsumura1, T. G. Tsuru1, A. Takeda2, Y. Arai2, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, N1-4
Development of a Compact X-Ray Source via Laser-Compton Scattering, K. Sakaue1, M. Washio1, S. Araki2, M. Fukuda2, T. Miyoshi2, N. Terunuma2, J. Urakawa2, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, Poster Presentation NPO2-3.
'Evaluation Test of SOI Monolithic Pixel Detectors with High-Speed Readout Electronics', T. Miyoshi, Y. Arai, Y. Fujita, K. Hara, S. Honda, Y. Ikegami, Y. Ikemoto, K. Tauchi, A. Takeda, T. Tsuboyama, Y. Unno, IEEE Nucl. Sci. Symp., Seoul, Oct.27-Nov. 2, 2013, Poster Presentation NPO1-3.
Total Ionization Damage Effects in Double Silicon-on-Insulator Devices, S. Honda1, K. Hara1, Y. Arai2, T. Miyoshi2, M. Ohno3, T. Hatsui4, T. Tsuru5, N. Miura6, H. Kasai6, M. Okihara7, M. Asano1, T. Maeda1, N. Tobita1, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013、N41-2,
'Development of Assembly of SOI for Impurity Transport Study in LHD', S. MUTO, T. MIYOSHI, N. TAMURA, H.NAKANSHI, Y. ITOH, K. TSUKADA, T. TSURU, Y. ONO, S. SUDO, Y. ARAI, IEEE Nucl. Sci. Symp., Seoul, Oct. 2013, Poster Presentation NPO1-88.
S. Mitsui, Development of Silicon-On-Insulator Monolithic Pixel Detectors -FZ SOI sensor-, HSTD9 (International Hiroshima Symposium on the Development and Application of Semiconductor Tracking Detectors)
Monolithic pixel detectors with 0.2 um FD-SOI pixel process technology, Oral, T. MIYOSHI, Y. ARAI, Y. IKEMOTO,Y. UNNO, Y. IKEGAMI, R. ICHIMIYA, Y. FUJITA, K. TAUCHI, T. TSUBOYAMA, A. TAKEDA, T. TSURU, S. NAKASHIMA, G. S. RYU, T. KOHRIKI, 13th Vienna Conference on Instrumentation (VCI2013), Vienna, Austria, Feb. 11-15, 2013, Nucl. Instr. and Meth. A, Vol. 732, December 2013, Pages 530-534, http://dx.doi.org/10.1016/j.nima.2013.06.029.
Tests With Soft X-rays of an Improved Monolithic SOI Active Pixel Sensor, Ryu, S. G.; Tsuru, T. G.; Prigozhin, G.; Kissel, S.; Bautz, M.; LaMarr, B.; Nakashima, S.; Foster, R. F.; Takeda, A.; Arai, Y.; Imamura, T.; Ohmoto, T.; Iwata, A. Nuclear Science, IEEE Transactions on Volume:60, Issue: 1, Part: 2,Digital Object Identifier: 10.1109/TNS.2012.2231880, Publication Year: 2013 , Page(s): 465- 469
Development of the Pixel OR SOI Detector for High Energy Physics Experiments, Y. Ono, A. Ishikawa, Y. Arai, T. Tsuboyama, Y. Onuki, A. Iwata, T. Imamura, T. Ohmoto, International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2012), Inawashiro, Japan. Nuclear Instruments & Methods in Physics Research A (2013), Volume 731, 11 December 2013, Pages 266–269, http://dx.doi.org/10.1016/j. nima.2013.06.044.
Measurement results of DIPIX pixel sensor developed in SOI technology, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 718, 1 August 2013, Pages 274-278, Mohammed Imran Ahmed, Yasuo Arai, Marek Idzik, Piotr Kapusta, Toshinobu Miyoshi, Michal Turala, http://dx.doi.org/10.1016/j.nima.2012.10.099
A monolithic pixel sensor (TRAPPISTe-2) for particle physics instrumentation in OKI 0.2μm SOI technology, L Soung Yee, P Alvarez, E Martin, E Cortina and C Ferrer, 2012 1748-0221 7 C12028 doi:10.1088/1748-0221/7/12/C12028,
X-Ray Detection Using SOI Monolithic Sensors at a Compact High-Brightness X-Ray Source Based on Inverse Compton Scattering, Oral, T. Miyoshi, Y. Arai, M. Fukuda, J. Haba, H. Hayano, Y. Honda, K. Sakaue, H. Shimizu, A. Takeda, J. Urakawa, K. Watanabe, 2012 IEEE Nuclear Science Symposium, Anaheim, CA, USA. Nov. 2012.
Progress in Development of Monolithic Active Pixel Detector for X-ray Astronomy with SOI CMOS Technology, Physics Procedia, Volume 37, 2012, Pages 1373-1380, Shinya Nakashima, Syukyo Gando Ryu, Takeshi Go Tsuru, Ayaki Takeda, Yasuo Arai, Toshinobu Miyoshi, Ryo Ichimiya, Yukiko Ikemoto, Toshifumi Imamura, Takafumi Ohmoto, Atsushi Iwata.
Design and Evaluation of a SOI Pixel Sensor for X-ray Trigger-driven Readout, Ayaki Takeda, Yasuo Arai, Syukyo Gando Ryu, Shinya Nakashima, Takeshi Go Tsuru,Toshifumi Imamura, Takafumi Ohmoto, and Atsushi Iwata, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL PP,Issue 99, 2013. Digital Object Identifier: 10.1109/TNS.2012.2225072.
Progress of FD-SOI technology for monolithic pixel detectors, Okihara, M. ; Kasai, H. ; Miura, N. ; Kuriyama, N. ; Nagatomo, Y. ; Hatsui, T. ; Omodani, M. ; Miyoshi, T. ; Arai, Y., 2012 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 , pp. 471- 474. DOI: 10.1109/NSSMIC.2012.6551151.
High Resolution X-ray Imaging Sensor with SOI Technology, poster, A. TAKEDA, Y. ARAI, T. MIYOSHI, M. OKIHARA, H. KASAI, N. MIURA, N. KURIYAMA, Y. NAGATOMO, International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2012), Inawashiro, Japan.
High-Resolution Monolithic Pixel Detectors in SOI Technology, Oral, T. MIYOSHI, Y. ARAI, I. M. AHMED, P. KAPUSTA, R. ICHIMIYA, Y. IKEMOTO, Y. FUJITA, K. TAUCHI, A. TAKEDA, International Workshop on Semiconductor Pixel Detectors for Particles and Imaging (PIXEL2012), Inawashiro, Japan.
“Progress of SOI Pixel Process”, Y. Arai, International Workshop on Semiconductor Pixel Detectors for Particles and Imaging, September 3 – 7, 2012 in Inawashiro, Japan, Invited Talk.
IEEE Solid State Device and Materials, Kyoto, Invited Talk.Extended abstract, J-1-1, pp. 1107-1108.
Advanced Radiation Image Sensors with SOI Technology, Yasuo Arai, Sep. 25, 2012,
X-Ray Detector Activities in Japan, DOE Basic Energy Science Neutron and Photon Detector W.S., @Gaithersburg, Invited Talk, 2012.8.1, Yasuo Arai.
Recent Progress of Pixel Detector R&D based on SOI Technology, Physics Procedia, Volume 37, 2012, Pages 1039-1045, Toshinobu Miyoshi, Yasuo Arai, Youichi Fujita, Kazuhiko Hara, Ryo Ichimiya, Yoichi Ikegami, Yukiko Ikemoto, Hiroki Kasai, Hironori Katsurayama, Takashi Kohriki, Masao Okihara, Yoshimasa Ono, Yoshiyuki Onuki, Kohei Shinsho, Ayaki Takeda, Kazuya Tauchi, Toru Tsuboyama, Yoshinobu Unno.
Development of Low Power Cryogenic Readout Integrated Circuits Using Fully-Depleted-Silicon-on-Insulator CMOS Technology for Far-Infrared Image Sensors, T. Wada, H. Nagata, H. Ikeda, Y. Arai, M. Ohno and K. Nagase,Journal of Low Temperature Physics, Issn: 0022-2291, 2012,DOI:10.1007/s10909-012-0461-6, http://www.springerlink.com/content/j7306844556t5397/,
Development of an SOI analog front-end ASIC for X-ray charge coupled devices, T. Kishishita, G. Sato, H. Ikeda, M. Kokubun, T. Takahashi, T. Idehara, H. Tsunemi, Y. Arai, Nucl. Instr. and Meth.A, Vol. 636, Issue 1, Suppl. 21 April 2011, Pages S143-S148.
SOI Pixel Technology,Y. Arai, The 8th international Hiroshima Symposium on the Development and Application of Semiconductor Tracking Detectors (HSTD-8) , Dec. 5-8, 2011, Taipei, Invited Talk.
First Performance Evaluation of an X-Ray SOI Pixel Sensor for Imaging Spectroscopy and Intra-Pixel Trigger, Syukyo Gando Ryu ; Tsuru, T.G. ; Nakashima, S. ; Takeda, A. ; Arai, Y. ; Miyoshi, T. ; Ichimiya, R. ; Ikemoto, Y. ; Matsumoto, H. ; Imamura, T. ; Ohmoto, T. ; Iwata, A., Nuclear Science, IEEE Transactions on Volume:
Performance study of monolithic pixel detectors fabricated with FD-SOI technology, Miyoshi, T. ; Arai, Y. ; Ichimiya, R. ; Ikemoto, Y. ; Takeda, A., Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE, DOI: 10.1109/NSSMIC.2011.6154664, Publication Year: 2011 , Page(s): 1702
Development of X-ray imaging spectroscopy sensor with SOI CMOS technology, Syukyo Gando Ryu ; Tsuru, T.G. ; Nakashima, S. ; Arai, Y. ; Takeda, A. ; Miyoshi, T. ; Ichimiya, R. ; Ikemoto, Y. ; Takashima, R. ; Imamura, T. ; Ohmoto, T. ; Iwata, A., Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE, DOI: 10.1109/NSSMIC.2010.5873714, Publication Year: 2010 , Page(s): 43- 48
Development of FD-SOI monolithic pixel devices for high-energy charged particle detection, Hara, K. ; Shinsho, K. ; Ishibashi, T. ; Arai, Y. ; Miyoshi, T. ; Ikemoto, Y. ; Ichimiya, R. ; Tsuboyama, T. ; Kohriki, T. ; Yasu, Y. ; Onuki, Y. ; Ono, Y. ; Katsurayama, H. ; Takeda, A. ; Hanagaki, K., Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE, DOI: 10.1109/NSSMIC.2011.6154318, Publication Year: 2011 , Page(s): 1045
SOI detector developments, Y. Onuki, H. Katsurayama,Y. Ono, H. Yamamoto, Y. Arai, Y. Fujita, R. Ichimiya, Y. Ikegami, Y. Ikemoto, T. Kohriki, T. Miyoshi, K. Tauchi, S. Terada, T. Tsuboyama, Y. Unno, T. Uchida, K. Hara, K. Shinsho, A. Takeda, K. Hanagaki, T. G. Tsuru, S.G. Ryu, S. Nakashima, H. Matsumoto, R. Takashima, H. Ikeda, D. Kobayashi, T. Wada, T. Hatsui, T. Kudo, A. Taketani, K. Kobayashi, Y. Kirihara, S. Ono, M. Omodani, T. Kameshima, Y. Nagatomo, H. Kasai, N. Kuriyama, N. Miura, M. Okihara, The 20th Anniversary International Workshop on Vertex Detectors - VERTEX 2011, June 19 - 24, 2011, Rust, Lake Neusiedl, Austria, Proceedings of Science, PoS(Vertex 2011)043.
Development of Cryogenic Readout Electronics for Far-Infrared Astronomical Focal Plane Array, Hirohisa NAGATA, Takehiko WADA, Hirokazu IKEDA, Yasuo ARAI, Morifumi OHNO, Koichi NAGASE, IEICE TRANSACTIONS on Communications, Vol. E94-B No.11, pp.2952-2960,2011,http://search.ieice.org/bin/summary.php?id=e94-b_11_2952&category=B&year=2011&lang=E&abst=,
First Performance Evaluation of an X-Ray SOI Pixel Sensor for Imaging Spectroscopy and Intra-Pixel Trigger,Syukyo Gando Ryu, Takeshi Go Tsuru, Shinya Nakashima, Ayaki Takeda,Yasuo Arai, Toshinobu Miyoshi, Ryo Ichimiya, Yukiko Ikemoto, Hironori, Matsumoto, Toshifumi Imamura, Takafumi Ohmoto, and Atsushi Iwata, IEEE Transactions on Nuclear Science, Vol. 58, No. 5, Oct. 2011, pp. 2528-2536, ISSN: 0018-9499, Digital Object Identifier: 10.1109/TNS.2011.2160970
Monolithic pixel detectors in a deep submicron SOI process,Grzegorz Deptuch,Nuclear Instruments and Methods in Physics Research A623(2010)183_185,
Tests of monolithic pixel detectors in SOI technology with depleted substrate, Piero Giubilato, Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes b, Tae Sung Kim,Serena Mattiazzo, Devis Pantano, Nicola Pozzobon, C.S.Tindall, Sarah Zalusky, Nucl.Instr.and Meth. A(2010), doi:10.1016/j.nima.2010.11.185,
SOI Readout ASIC of Pair-monitor for International Linear Collider,Yutaro Sato, Yasuo Arai, Hirokazu Ikeda, Tadashi Nagamine, Yosuke Takubo, Toshiaki Tauchi, Hitoshi Yamamoto, Nuclear Inst. and Methods in Physics Research, A、10.1016/j.nima.2011.02.063, Vol. 637, Isuue 1, May 2011, pp. 53-59.
Radiation effects in silicon-on-insulator transistors with back-gate control method fabricated with OKI Semiconductor 0.20 μm FD-SOI technology,M. Kochiyama, T. Sega, K. Hara, Y. Arai, T. Miyoshi, Y. Ikegami, S. Terada, Y. Unno, K. Fukuda, M. Okihara, Nucl. Instr. and Meth. A(2010), doi:10.1016/j.nima.2010.04.086, Volume 636, Issue 1, Supplement, 21 April 2011, Pages S62-S67.
Performance study of SOI monolithic pixel detectors for X-ray application, T. Miyoshi, Y. Arai, M. Hirose, R. Ichimiya, Y. Ikemoto, T. Kohriki, T. Tsuboyama, Y. Unno, 7th International Hiroshima Symposium on Development and Applications of Semiconductor Tracking Devices, International Conference Center Hiroshima, Japan, Aug. 29-Sep.1, 2009, Nucl. Instr. and Meth. A, doi:10.1016/j.nima.2010.04.117, Vol. 636 (2011)pp. S237-S241.
Radiation test on FD-SOI Readout ASIC of Pair-monitor for ILC, Yutaro Sato , Yasuo Arai, Hirokazu Ikeda, Tadashi Nagamine, Yosuke Takubo, Toshiaki Tauchi, Hitoshi Yamamoto, Nucl. Instr. and Meth. A(2011), doi:10.1016/j.nima.2010.12.149, Volume 650, Issue 1, 11 September 2011, Pages 106-110.
Evaluation of Monolithic Silicon-On-Insulator Pixel Devices Thinned to 100 um, K. Shinsho, K. Hara, Y. Arai, Y. Ikemoto, T. Kohriki, T. Miyoshi, 2010 IEEE Nuclear Science Symposium, Conference record, doi: 10.1109/NSSMIC.2010.5873838, 2010, Page(s): 646-649
Development of X-ray Imaging Spectroscopy Sensor with SOI CMOS Technology, Syukyo Gando Ryu, Takesahi Go Tsuru, Shinya Nakashima, Yasuo Arai, Ayaki Takeda, T. Miyoshi, R. Ichimiya, Y. Ikemoto, R. Takashima d, T. Imamura, T. Ohmoto, and A. Iwata, 2010 IEEE Nuclear Science Symposium, Conference record. doi: 10.1109/NSSMIC.2010.5873714, 2010 , Page(s): 43-48.
Development of INTPIX and CNTPIX Silicon-On-Insulator Monolithic Pixel Devices, K. Hara, M. Kochiyama, K. Koike, T. Sega, K. Shinsho, Y. Arai, Y. Fujita, R. Ichimiya, Y. Ikegami, Y. Ikemoto, T. Kohriki, T. Miyoshi, K. Tauchi, S.Terada, T. Tsuboyma, Y. Unno, Y. Horii, Y. Onuki, D. Nio, A. Takeda, K.Hanagaki, J. Uchida, T. Tsuru, S.G. Ryu, I. Kurachi, H. Kasai, N. Kuriyama, N.Miura, M. Okihara, M. Motoyoshi, 19th International Workshop on Vertex Detectors - VERTEX 2010, Loch Lomond, Scotland, UK, June 06 _ 11 2010, http://pos.sissa.it/cgi-bin/reader/conf.cgi?confid=113, PoS(VERTEX 2010)033.
Large SET Duration Broadening in a Fully-Depleted SOI Technology-Mitigation With Body Contacts, Ferlet-Cavrois, V.; Kobayashi, D.; McMorrow, D.; Schwank, J. R.; Ikeda, H.; Zadeh, A.; Flament, O.; Hirose, K.;, Nuclear Science, IEEE Transactions on Volume: 57 , Issue: 4 , Part: 1, Digital Object Identifier: 10.1109/TNS.2010.2048927, Publication Year: 2010 , Page(s): 1811 - 1819.
Readout ASIC With SOI Technology for X-Ray CCDs, Kishishita, T.; Idehara, T.; Ikeda, H.; Tsunemi, H.; Arai, Y.; Sato, G.; Takahashi, T.;, Nuclear Science, IEEE Transactions on Volume: 57 , Issue: 4 , Part: 2, Digital Object Identifier: 10.1109/TNS.2010.2049371, Publication Year: 2010 , Page(s): 2359 - 2364.
Integrated Radiation Image Sensors with SOI technology, Yasuo Arai, Toshinobu Miyoshi, Ryo Ichimiya, Kazuhiko Hara, Yoshiyuki Onuki, SOI Conference (SOI), 2010 IEEE International Digital Object Identifier: 10.1109/SOI.2010.5641403, Publication Year: 2010 , Page(s): 1 - 5.
Vertical Integration of Radiation Sensors and Readout Electronics,Y.Arai,15th Mediterranian Electromechanical Conference, Melecon 2010, Valletta, Malta, 25-28 April, 2010, pp. 1062-1067.
New Techniques in SOI Pixel Detector,Y. Arai, 2009 IEEE Nuclear Science Symposium and Medical Imaging Conference, Orlando Florida, Oct. 25-31, 2009, Conference Record, N22-2, pp. 1161-1164. Digital Object Identifier: 10.1109/NSSMIC.2009.5402397
Reduction techniques of the back gate effect in the SOI Pixel Detector,R. Ichimiya, Y.Arai, K. Fukuda, I. Kurachi, N. Kuriyama, M. Ohno, M. Okihara, for the SOI Pixel collaboration,Proceedings of Topical Workshop on Electronics for Particle Physics (TWEPP-09), 21-25 Sep. 2009, CERN-2009-006, pp. 68-71.
Development of SOI Pixel Process Technology,Y. Arai, T. Miyoshi, Y. Unno, T. Tsuboyama, S. Terada, Y. Ikegami, R. Ichimiya, T. Kohriki, K. Tauchi, Y. Ikemoto, R. Ichimiya, Y. Fujita, T. Uchida, H. Ikeda, K. Hara, H. Miyake, M. Kochiyama, T. Sega, K. Hanagaki, M. Hirose, J. Uchida, Y. Onuki, Y. Horii, H. Yamamoto, T. Tsuru, H. Matsumoto, S. G. Ryu, R. Takashima, A. Takeda, H. Ikeda, D. Kobayashi, T. Wada, H. Nagatg, T. Hatsui, T. Kudo, A. Taketani, T. Kameshima, T. Hirono, M. Yabashi, Y. Furukawa, M. Battaglia, P. Denes, C. Vu, D. Contarato, P. Giubilato, T. S. Kim, T. Hatsui, T. Kudo, T. Hirono, M. Yabashi, Y. Furukawe, M. Ohno, K. Fukuda, I. Kurachi, H. Komatsubara, J. Ida, M. Okihara, N. Kuriyama, M. Motoyoshi, 7th International Hiroshima Symposium on Development and Applications of Semiconductor Tracking Devices, International Conference Center Hiroshima, Japan, Aug. 29-Sep.1, 2009,Nucl. Instr. and Meth. doi:10.1016/j.nima.2010.04.081. Volume 636, Issue 1, Supplement, 21 April 2011, Pages S31-S36.
Silicon-on-insulator technology enables next-generation radiation image sensors, Yasuo Arai and Toshinobu Miyoshi, August 2009, SPIE Newsroom. http://spie.org/x36212.xml?highlight=x2414&ArticleID=x36212,DOI:10.1117/2.1200907.1725.
Developments of SOI Monolithic Pixel Detectors, Y. Arai, T. Miyoshi, Y. Unno, T. Tsuboyama, S. Terada, Y. Ikegami, T. Kohriki, K. Tauchi, Y. Ikemoto, R. Ichimiya, H. Ikeda, K. Hara, H. Miyake, M. Kochiyama, T. Sega, K. Hanagaki, M. Hirose, T. Hatsui, T. Kudo, T. Hirono, M. Yabashi, Y. Furukawa, G. Varner, M. Cooney, H. Hoedlmoser, J. Kennedy, H. Sahoo, M. Battaglia, P. Denes, C. Vu, D. Contarato, P. Giubilato, L. Glesener, R. Yarema, R. Lipton, G. Deptuch, M. Trimpl, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, M. Okihara, H. Hayashi, Y. Kawai, A. Ohtomo, , Technology and Instrumentation in Particle Physics 2009 in Tsukuba, Japan, 11-17 March, 2009, Nucl. Instr. and Meth. A 623(2010)186-188, doi:10.1016/j.nima.2010.02.190
Device-physics-based analytical model for single event transients in SOI CMOS logics”,D. Kobayashi, K. Hirose, V. Ferlet-Cavrois, D. McMorrow, M. Gaillardin, T. Makino, H. Ikeda, Y. Arai, and M. Ohno,, 2009 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Quebec, Canada, July 20--24, IEEE Trans. Nucl. Sci. 56 (2009) 3043.
High-speed charge-to-time converter ASIC for the Super-Kamiokande detector, H. Nishino, K. Awai, Y. Hayato, S. Nakayama, K. Okumura, M. Shiozawa, A. Takeda, K. Ishikawa, A. Minegishi, Y. Arai, Nucl.Instrum.Meth.A610:710-717,2009.
Waveform Observation of Digital Single-Event Transients Employing Monitoring Transistor Technique, Daisuke Kobayashi, Kazuyuki Hirose, Yoshimitsu Yanagawa, Hirokazu Ikeda, Hirobumi Saito, V´eronique Ferlet-Cavrois, Dale McMorrow, Marc Gaillardin, Philippe Paillet, Yasuo Arai, and Morifumi Ohno,IEEE Trans. Nucl. Sci., Volume 55, Issue 6, Part 1, Dec. 2008 Page(s):2872 _ 2879, Digital Object Identifier 10.1109/TNS.2008.2006836.
Development of Silicon-on-Insulator Sensor for X-Ray Free-Electron Laser Applications,T. Kudo, T. Hatsui, Y. Arai, Y. Ikegami, Y. Unno, T. Tsuboyama, S. Terada, M. Hazumi, T. Kohriki, H. Ikeda, K. Hara, A. Mochizuki, H. Miyake, H. Ishino, Y. Saegusa, S. Ono, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, H. Hayashi, Y. Kawai, M. Okihara, T. Ishikawa, IEEE Nucl. Sci. Symp., Oct. 2008, Poster R12-58,
Radiation Resistance of SOI Pixel Sensors Fabricated with OKI 0.15μm FD-SOI Technology, K. Hara, M. Kochiyama, A. Mochizuki, T. Sega, Y. Arai, K. Fukuda, H. Hayashi, M. Hazumi, J. Ida, H. Ikeda, Y. Ikegami, H. Ishino, Y. Kawai, T. Kohriki, H. Komatsubara, H. Miyake, M. Ohno, M. Okihara, S. Terada, T. Tsuboyama, Y. Unno, N04-5, Nuclear Science Symposium Conference Record, 2008. NSS '08. IEEE, 19-25 Oct. 2008 Page(s):1369 _ 1374, Digital Object Identifier 10.1109/NSSMIC.2008.4774670, IEEE Transactions on Nuclear Science, Volume 56, Issue 5, Part 2, Oct. 2009 Page(s):2896 - 2904.
The 11th Vienna Conference on Instrumentation, Vienna, Austria February 19-24, 2007. T. Tsuboyama (Withdrawn?)
R&D of a pixel sensor based on 0.15 μm fully depleted SOI technology, Toru Tsuboyama, Yasuo Arai, Koichi Fukuda, Kazuhiko Hara, Hirokazu Hayashi, Masashi Hazumi, Jiro Ida, Hirokazu Ikeda, Yoichi Ikegami, Hirokazu Ishino, Takeo Kawasaki, Takashi Kohriki, Hirotaka Komatsubara, Elena Martin, Hideki Miyake, Ai Mochizuki, Morifumi Ohno, Yuuji Saegusa, Hiro Tajima, Osamu Tajima, Tomiaki Takahashi, Susumu Terada, Yoshinobu Unno, Yutaka Ushiroda and Gary Varner, Proceedings of the 15th International Workshop on Vertex Detectors: Perugia, Italy, September 25–29, 2006, Nucl. Instr. and Meth A. Volume 582, Issue 3, 1 December 2007, Pages 861-865, http://dx.doi.org/10.1016/j.nima.2007.07.130,
“A monolithic pixel sensor in fully depleted SOI technology”, , Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Chinh Vu. , Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Volume 583, Issues 2-3, 21 December 2007, Pages 526-528.
Total Dose Effects on 0.15μm FD-SOI CMOS Transistors”, , Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, H. Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T.Tsuboyama and Y. Unno,, 2007 IEEE Nuclear Science Symposium Conference Record, N44-6, pp. 2173-2177.
SOI Pixel Developments in a 0.15μm Technology”,, Y. Arai, Y. Ikegami, Y. Unno, T. Tsuboyama, S. Terada, M. Hazumi, T. Kohriki, H. Ikeda, K. Hara, H. Miyake, H. Ishino, G. Varner, E. Martin, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, H. Hayashi, Y. Kawai, , 2007 IEEE Nuclear Science Symposium Conference Record, N20-2, pp. 1040-1046.
SOI Monolithic Pixel Detector R&D in a 0.15 mm SOI Technology, Y. Arai, Y. Ikegami, Y. Unno, T. Tsuboyama, S. Terada, M. Hazumi, T. Kohriki, H. Ikeda, K. Hara, H. Ishino, H. Miyake, K. Hanagaki, G. Varner, E. Martin, H. Tajima, Y. Hayashi, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida., 16th International Workshop on Vertex detectors, September 23-28, 2007, Lake Placid, NY, USA, Vertex 2007, Poster Presentation.
Electronics and Sensor Study with the OKI SOI process, Y. Arai, , Topical Workshop on Electronics for Particle Physics (TWEPP-07), 3-7 Sep. 2007, Prague, Czech Republic. CERN-2007-007, pp. 57-63.
Deep sub-micron FD-SOI for front-end application, Nuclear Instruments and Methods in Physics Research Section A, Volume 579, Issue 2, 1 September 2007, Pages 701-705, H. Ikeda, Y. Arai, K. Hara, H. Hayakawa, K. Hirose, Y. Ikegami, H. Ishino, Y. Kasaba, T. Kawasaki, T. Kohriki, et al., Proceedings of the 11th Symposium on Radiation Measurements and Applications (SORMA XI): Ann Arbor, MI, USA, May 23_26, 2006, Nuclear Instruments and Methods in Physics Research Section A, Volume 579, Issue 2, 1 September 2007, Pages 701-705.
Evaluation of OKI SOI Technology,Y. Ikegami, Y. Arai, K. Hara, M. Hazumi, H. Ikeda, Ishino, T. Kohriki, H. Miyake, A. Mochizuki, S. Terada, T. Tsuboyama, Y. Unno,, presented at the 6th Hiroshima symposium of Development and Application of semiconductor tracking devices, Sep. 11-15, 2006, Carmel, California, U.S.A., Nuclear Instruments and Methods in Physics Research Section A, Volume 579, Issue 2, 1 Sept. 2007, Pages 706-711,
Monolithic Pixel Detector in a 0.15um SOI Technology, Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, H. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, H. Hayashi,, IEEE Nuclear Sci. Symposium, San Diego, Oct. 29 - Nov. 4, 2006, Conference Record, Vol. 3, Oct. 2006 Page(s):1440 - 1444, Digital Object Identifier 0.1109/NSSMIC.2006.354171.
R & D of a pixel sensor based on 0.15 μm fully depleted SOI technology, Toru Tsuboyama, Yasuo Arai, Koichi Fukuda, Kazuhiko Hara, Hirokazu Hayashi, Masashi Hazumi, Jiro Ida, Hirokazu Ikeda, Yoichi Ikegami, Hirokazu Ishino, Takeo Kawasaki, Takashi Kohriki, Hirotaka Komatsubara, Elena Martin, Hideki Miyake, Ai Mochizuki, Morifumi Ohno, Yuuji Saegusa, Hiro Tajima, Osamu Tajima, Tomiaki Takahashi, Susumu Terada, Yoshinobu Unno, Yutaka Ushiroda and Gary Varner,Sep. 2006, Perugia, Italy, Vertex 2006, Nucl. Instr. and Meth. A. Volume 582, Issue 3, 1 December 2007, Pages 861-865. http://dx.doi.org/10.1016/j.nima.2007.07.111
Development of a CMOS SOI Pixel Detector, Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada T. Tsuboyama, Y. Unno, Y. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, H. Miyake, E. Martin, G. Varner, H. Tajima M. Ohno, K. Fukuda, H. Komatsubara, J. Ida,Proceedings of 12th Workshop on Electronics for LHC and Future Experiments (LECC 2006), 25-29 September 2006, Valencia SPAIN.
Monolithic Pixel Detector in a 0.15mm FD-SOI Technology, Y. Arai,presented at the 6th Hiroshima symposium of Development and Application of semiconductor tracking devices, Sep. 11-15, 2006, Carmel, California, U.S.A.
First Results of 0.15um CMOS SOI Pixel Detector, Y. Arai, M. Hazumi, Y. Ikegami, T. Kohriki, O. Tajima, S. Terada, T. Tsuboyama, Y. Unno, H. Ushiroda, H. Ikeda, K. Hara, H. Ishino, T. Kawasaki, E. Martin, G. Varner, H. Tajima, M. Ohno, K. Fukuda, H. Komatsubara, J. Ida, SNIC Symposium, Stanford, California, 3-6 April 2006, SLAC-PUB-12079, KEK preprint, 2006-34, SLAC Electronic Conference Proceedings Archive (SLAC-R-842, eConf: C0604032) PSN-0016. http://www.slac.stanford.edu/econf/C0604032/papers/0016.PDF.
Hard X-Ray SOI Sensor Prototype, E. Martin, G. Varner, M. Barbero, J. Kennedy, H. Tajima, Y. Arai, IEEE Ph. D. Research in Microelectronics and Electronics, 11 - 16 June 2006, Otranto (Lecce), Italy